Recent progress and current issues in SiC semiconductor devices for power applications

作     者：Johnson, CM Wright, NG Uren, MJ Hilton, KP Rahimo, M Hinchley, DA Knights, AP Morrison, DJ Horsfall, AB Ortolland, S O'Neill, AG 

作者机构：Newcastle Univ Dept Elect & Elect Engn Newcastle Upon Tyne NE1 7RU Tyne & Wear England Def Res & Evaluat Agcy Malvern WR14 3PS Worcs England Semelab Lutterworth LE17 4JB Leics England Univ Surrey Sch Elect Engn Informat Technol & Math Guildford GU2 5XH Surrey England 

出 版 物：《IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS》 (IEE Proc Circuits Devices Syst)

年 卷 期：2001年第148卷第2期

页      面：101-108页

核心收录：

学科分类：0808[工学-电气工程] 080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

主　　题：current status energy component FULL-SCALE material quality currents electric current SILICON CARBIDE Processing technologies 

摘      要：A review of current issues in SIC device processing technology is followed by a critical assessment of the current state-of-the-art and future: potential for SiC power devices. Material quality, ion implantation, the SiC-SiO2 interface and the thermal stability of contacting systems are all identified as requiring further work before the full range of devices and applications call be addressed. The evaluation of current device technology reveals that SiC Schottky and PIN diodes are already capable of increased power densities and substantially improved dynamic performance compared to their Si counterparts. Although direct replacement of Si devices is not yet economically viable, improvements in system performance and reductions in total system cost may be realised in the short term. Widespread use will, however, require continued improvements in wafer quality while costs must fall by a factor of ten. Finally, the development of new and improved packaging techniques, capable of handling increased die temperature and high thermal cycling stresses, will be needed to fully exploit the potential of SIG.