Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs

作     者：吕红亮 张义门 张玉明 车勇 

作者机构：Microelectronics InstituteKey Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of EducationXidian University Engineering College of Armed Police Force 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2008年第17卷第4期

页      面：1410-1414页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant No 60606022) the State Key Development Program for Basic Research of China (Grant No 51327010101) Xi’an Applied Materials Innovation Fund,China (Grant No XA-AM-200702) 

主　　题：4H-SiC MESFET self-heating analytic model 

摘      要：A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region I - V model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physicalbased simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.