Heteroepitaxial growth of 3C-SiC on SOI for sensor applications

作     者：Krötz, G Möller, H Eickhoff, M Zappe, S Ziermann, R Obermeier, E Stoemenos, J 

作者机构：Daimler Benz AG Dept FT2M D-81663 Munich Germany Tech Univ Berlin Berlin Germany Aristotelian Univ Salonika GR-54006 Salonika Greece 

出 版 物：《MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY》 (材料科学与工程，B辑：先进技术所需固体材料)

年 卷 期：1999年第61-2卷

页      面：516-521页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：European Brite Euram Programme, (BRPR-CT96-0261) Bundesministerium für Bildung und Forschung, BMBF 

摘      要：Typical industrial high temperature sensor applications are reviewed and a short overview of the different high temperature sensor technologies is given. The pros and cons are weighted. Silicon carbide on insulator (SiCOIN) technology comes out to be the most attractive, provided the state of development can be brought up to the one of silicon and silicon on insulator (SOT). Due to the lack of commercially available SIC on SOI wafers, a new SiC on SOI technology has been developed. It is based on the precursor gas methylsilane. The low temperature growth process is described and in-situ n-type doping, which is necessary for sensor applications, has been carried out successfully over a wide range of concentrations without loosing the good crystal properties. Actually the full process is being transferred from a test reactor to a 4 inch machine. This should provide 3C-SiC on SOI wafers for commercial sensor applications. A demonstrator of combustion pressure sensor dedicated to pressure-based engine control is shown. Results of the pressure sensor fitted in a motor-test setup are summarized. (C) 1999 Elsevier Science S.A. All rights reserved.