Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices

作     者：N A Shandyba I V Panchenko R V Tominov V A Smirnov M I Pelipenko E G Zamburg Y H Chu 

作者机构：Department of Nanotechnology and Microsystems Southern Federal University Taganrog 347928 Russia UAC company BERIEV Taganrog 347923 Russia Department of Electrical & Computer Engineering National University of Singapore 117582 Singapore Department of Materials Science and Engineering National Chiao Tung University Hsinchu 1001 Taiwan Department of Electrophysics National Chiao Tung University Hsinchu 1001 Taiwan Institute of Physics Academia Sinica Taipei 11529 Taiwan Material and Chemical Research Laboratories Industrial Technology Research Institute Hsinchu 31040 Taiwan 

出 版 物：《Journal of Physics: Conference Series》 

年 卷 期：2018年第1124卷第8期

学科分类：07[理学] 0702[理学-物理学] 

摘      要：Size effect on memristive properties of nanocrystalline ZnO film was investigated. It was shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high-resistance state (HRS) increase from 3.26±2.14 MΩ to 700.32±300.83 MΩ and low-resistance state (LRS) from 0.03±0.02 MΩ to 0.09±0.03 MΩ, respectively. The HRS/LRS ratio increases from 108 to 7742. The results can be useful for based on nanocrystalline ZnO films resistive synaptic devices manufacturing.