GAN FILMS PREPARED BY ECR PLASMA-ASSISTED DEPOSITION

作     者：ZHANG, S BRODIE, DE 

作者机构：Guelph-Waterloo Program for Graduate Work in Physics University of Waterloo Waterloo Ont. N2L 3G1 Canada 

出 版 物：《THIN SOLID FILMS》 (固体薄膜)

年 卷 期：1994年第237卷第1-2期

页      面：124-128页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：Thin films 

摘      要：An electron cyclotron resonance plasma-assisted deposition method has been used to prepare polycrystalline GaN films. These GaN films can have dark conductivities as low as 10(-10) S cm(-1) and they exhibit well-defined conductivity activation energies. The sample conductivity is decreased by surface adsorption of gases and it increases again when the adsorbed species is photodesorbed from the surface using UV light. As a result, the photoresponse is very slow, especially the decay process, which may require several days for a sample to recover when it is mounted in a vacuum. This recovery time can be reduced significantly if the sample temperature is increased or the sample is exposed to air. In this respect, these GaN films have a number of features in common with ZnO.