New developments in beam induced current methods for the failure analysis of VLSI circuits

作     者：Chan, DSH Phang, JCH Lau, WS Ong, VKS Sane, V Kolachina, S Osipowicz, T Watt, F 

作者机构：Centre for Integrated Circuit Failure Analysis and Reliability Faculty of Engineering National University of Singapore 10 Kent Ridge Crescent Singapore 0511 Department of Physics Faculty of Science National University of Singapore 10 Kent Ridge Crescent Singapore 0511 

出 版 物：《MICROELECTRONIC ENGINEERING》 (Microelectron Eng)

年 卷 期：1996年第31卷第1-4期

页      面：57-67页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：VLSI circuits 

摘      要：Several new developments using beam induced current methods for the failure analysis of VLSI circuits will be reviewed in this paper. These include the development of a single contact electron beam induced current method (SCEBIC) which facilitates the collection of EBIC signals from VLSI circuits using only a single contact to the substrate, a complementary technique using a proton beam to access the active regions through multi-level metal layers and Tunneling Current Microscopy (TCM) to distinguish oxide, substrate and oxide/substrate defects in very thin silicon dioxide films.