Development of high power SiC devices for rail traction power systems

作     者：Liu, Guoyou Wu, Yibo Li, Kongjing Wang, Yangang Li, ChengZhan 

作者机构：State Key Lab Adv Power Semicond Devices Zhuzhou Hunan Peoples R China Dynex Semicond Ltd Power Semicond R&D Ctr Lincoln England 

出 版 物：《JOURNAL OF CRYSTAL GROWTH》 (晶体生长杂志)

年 卷 期：2019年第507卷

页      面：442-452页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：National Key Research and Development Program of China [2017YFB0102303] 

主　　题：SiC device Rail traction Computer simulation Heat transfer Semiconducting silicon 

摘      要：Si-based power devices have been widely used in electric locomotive and EMU, however, there are urgent requirements from the industry to have power converters with smaller size and higher performance. To meet such demands, wide band-gap (WBG) devices such as SiC power chips and modules are developed for the traction systems, and a 1.7 kV hybrid SiC power module has been used in Metro system and all SiC 3.3 kV power module has been developed. In this paper, the development of hybrid SiC and all SiC power modules are introduced from the perspectives of devices, modules and applications. SiC SBD and MOSFET chips and modules are manufactured and tested, both static and dynamic testing results are evaluated and showed that SiC devices present better performance and higher efficiency than the traditional Si IGBT modules, especially in the conditions of high temperature and high operation frequency. Based on the developed SiC modules, the urgent demand of traction converters with smaller size and lighter weight can be achieved while present advantages such as higher efficiency, power density, operation temperatures and frequency. The current challenges of SiC devices and future applications are discussed for the next generation of rail transportation.