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Electronic transport properties of an (8,0) carbon/silicon-carbide nanotube heterojunction

Electronic transport properties of an (8,0) carbon/silicon-carbide nanotube heterojunction

作     者:刘红霞 张鹤鸣 张志勇 

作者机构:Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of MicroelectronicsXidian University Institute of Information Science and TechnologyNorthwest University 

出 版 物:《Journal of Semiconductors》 (半导体学报(英文版))

年 卷 期:2009年第30卷第5期

页      面:5-8页

核心收录:

学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

基  金:supported by the Pre-Research Foundation from the National Ministries and Commissions(No.51308040203) 

主  题:carbon/silicon carbide nanotube heterojunction nonequilibrium Green's function transport properties 

摘      要:A two-probe system of the heterojunction formed by an (8, 0) carbon nanotube (CNT) and an (8, 0) silicon carbide nanotube (SiCNT) was established based on its optimized structure. By using a method combining nonequilibrium Green's function (NEGF) with density functional theory (DFF), the transport properties of the het-erojunction were investigated. Our study reveals that the highest occupied molecular orbital (HOMO) has a higher electron density on the CNT section and the lowest unoccupied molecular orbital (LUMO) mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are +1.8 and -2.2 V, respectively.

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