Electronic transport properties of an (8,0) carbon/silicon-carbide nanotube heterojunction

作     者：刘红霞 张鹤鸣 张志勇 

作者机构：Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of MicroelectronicsXidian University Institute of Information Science and TechnologyNorthwest University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第5期

页      面：5-8页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the Pre-Research Foundation from the National Ministries and Commissions(No.51308040203) 

主　　题：carbon/silicon carbide nanotube heterojunction nonequilibrium Green＇s function transport properties 

摘      要：A two-probe system of the heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） was established based on its optimized structure. By using a method combining nonequilibrium Green＇s function （NEGF） with density functional theory （DFF）, the transport properties of the het-erojunction were investigated. Our study reveals that the highest occupied molecular orbital （HOMO） has a higher electron density on the CNT section and the lowest unoccupied molecular orbital （LUMO） mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are ＋1.8 and -2.2 V, respectively.