A Novel CMOS Voltage Reference Based on Threshold Voltage Difference Between p-Type and n-Type MOSFETs

作     者：孔明 郭健民 张科 李文宏 Kong Ming;Guo Jianmin;Zhang Ke;Li Wenhong

作者机构：复旦大学专用集成电路与系统国家重点实验室上海201203 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2007年第28卷第10期

页      面：1546-1550页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

主　　题：MOS-only voltage reference threshold voltage temperature coefficient line regulation 

摘      要：A novel MOS-only voltage reference is presented,which is based on the threshold voltage difference between p-type and n-type MOSFETs. Its precision is improved by the cancellation of the process variation. The reference has been successfully implemented in a Chartered 0.35μm CMOS process. The occupied chip area is 0. 022mm^2. Measurements indicate that without trimming, the average output voltage error is 6mV at room temperature compared with the simulation result. The temperature coefficient is 180ppm/℃ in the worst case in the temperature range of 0 to 100℃ ,and the line regulation is ± 1.1%. The reference is applied in an adaptive power MOSFET driver.