Design of a CMOS Current-Adjustable Charge-Pump Circuit Insensitive to Power Supply and Temperature

作     者：赵晖 徐栋麟 潘莎 杨柯 任俊彦 章倩苓 Zhao Hui;Xu Donglin;Pan Sha;Yang Ke;REN Junyan;ZHANG QianLing

作者机构：复旦大学专用集成电路与系统国家重点实验室上海200433 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2003年第24卷第3期

页      面：260-265页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：上海市应用材料基金资助项目 (合同号 :0 10 2 ) 

主　　题：current-adjustable charge-pump bandgap low drop-out regulator DC-DC voltage-booster 

摘      要：A CMOS charge-pump circuit with adjustable current is presented.A bandgap voltage reference,a low drop-out regulator,and a capacitive DC-DC voltage-booster are used to generate supply voltage for the current *** generated voltage is insensitive to the changes of external power supply voltage and temperature,while the current reference itself is insensitive to *** circuit is designed in 0.18μm 1.8V standard digital CMOS *** simulated results show that the performance of the circuit is satisfied.