Investigation of in situ boron-doping in sige source/drain layer growth for PMOS devices

作     者：Zhong, Min Chen, Shou Mian Zhang, David Wei 

作者机构：State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China Shanghai IC RandD Center Co. Ltd. Shanghai201210 China 

出 版 物：《Journal of Nanomaterials》 (J. Nanomater.)

年 卷 期：2015年第2015卷第1期

页      面：1-6页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0803[工学-光学工程] 

基　　金：P. J. would like to thank E. Laenen for making accessible the formulas for the Wilson coefficients and for his comments. Moreover  P. J. is grateful to I. Schienbein for his help in obtaining correct NLO DGLAP evolution programs. We want to thank R. Gokieli and K. Doroba for their comments on the recent DELPHI data. Finally P. J. is grateful to M. Aurenche and M. Fontannaz for the AFG parametrization program  R. Nisius for all his remarks concerning the experimental data  and A. Zembrzuski for his comments. This work was partly supported by the European Community’s Human Potential Programme under Contract No. HPRN-CT-2000-00149 Physics at Collider and HPRN-CT-2002-00311 EURIDICE. F. C. also acknowledges partial financial support from Ministerio de Ciencia y Tecnología under Project No. FPA2003-09298-c02-01 and Junta de Andalucía under Project No. FQM 330. This work was partially supported by the Polish Committee for Scientific Research  Grant No. 1 P03B 040 26 and Project No. 115/E-343/SPB/DESY/P-03/DWM517/2003-2005 

主　　题：Si Ge alloys 

摘      要：Embedded SiGe (eSiGe) source/drain (S/D) was studied to enhance PMOS performance. Detailed investigations concerning the effect of GeHand Bgas flow rate on the resultant Boron-doping of the SiGe layer (on a 40 nm patterned wafer) were carried out. Various SiGeB epitaxial growth experiments were realized under systematically varying experimental conditions. Key structural and chemical characteristics of the SiGeB layers were investigated using Secondary Ion Mass Spectroscopy (SIMS), nanobeam diffraction mode (NBD), and Transmission Electron Microscopy (TEM) itself. Furthermore, I on / I off performances of 40 nm PMOS transistors are also measured by the Parametric Test Systems for the semiconductor industry. The results indicate that the ratio between GeHand Bgas flow rates influences not only the Ge and Boron content of the SiGeB layer, but also the PMOS channel strain and the morphology of the eSiGe S/D regions which directly affect PMOS performance. In addition, the mechanism of Boron-doping during SiGe layer growth on the pattern wafer is briefly discussed. The results and discussion presented within this paper are expected to contribute to the optimization of eSiGe stressor, aimed for advanced CMOS devices. © 2015 Min Zhong et al.