Low-temperature magnetoresistance of (111) (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3

作     者：V. V. Bal Z. Huang K. Han Ariando T. Venkatesan V. Chandrasekhar 

作者机构：Department of Physics and Astronomy Northwestern University Evanston Illinois 60208 USA NUSNNI-Nanocore National University of Singapore 117411 Singapore Department of Physics National University of Singapore 117551 Singapore NUS Graduate School for Integrative Sciences and Engineering National University of Singapore 117456 Singapore Department of Electrical and Computer Engineering National University of Singapore 117576 Singapore Department of Material Science and Engineering National University of Singapore 117575 Singapore 

出 版 物：《Physical Review B》 (Phys. Rev. B)

年 卷 期：2019年第99卷第3期

页      面：035408-035408页

核心收录：

基　　金：Northwestern University Micro/Nano Fabrication Facility U.S. Department of Energy, USDOE Basic Energy Sciences, BES Northwestern University, NU, (DE-FG02-06ER46346) Northwestern University, NU National Research Foundation Singapore, NRF, (NRF-CRP15-2015-01) National Research Foundation Singapore, NRF Ministry of Education - Singapore, MOE, (R-144-000-364-112, R-144-000-391-114) Ministry of Education - Singapore, MOE 

主　　题：Localization Magnetotransport Weak antilocalization Interfaces Transition metal oxides Two-dimensional electron gas 

摘      要：The two-dimensional conducting interfaces in SrTiO3-based systems are known to show a variety of coexisting and competing phenomena in a complex phase space. Magnetoresistance measurements, which are typically used to extract information about the various interactions in these systems, must be interpreted with care, since multiple interactions can contribute to the resistivity in a given range of magnetic field and temperature. Here we review all the phenomena that can contribute to transport in SrTiO3-based conducting interfaces at low temperatures. We apply this understanding to the perpendicular magnetoresistance data of the high-mobility system of (111) oriented (La0.3Sr0.7)(Al0.65Ta0.35)O3/STO heterostructures, and find an excess negative magnetoresistance contribution which cannot be explained by weak localization alone. We argue that contributions from magnetic scattering as well as electron-electron interactions, combined with weak localization/antilocalization, can provide a possible explanation for the observed magnetoresistance.