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作者机构:Department of Applied Technology Daqing Petroleum Institute Qinhuangdao 066004 Beijing National Center for Electron Microscopy The State Key Laboratory of New Ceramics and Fine Processing. Laboratory of Advanced Materials Department of Materials Science and Engineering Tsinghua University Beijing 100084
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2010年第27卷第10期
页 面:168-171页
核心收录:
学科分类:07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0702[理学-物理学]
主 题:THERMAL expansion NANOWIRES ELECTROFORMING ZINC sulfide TEMPERATURE effect DOPED semiconductors OPTOELECTRONIC devices
摘 要:The thermal expansion behavior of semiconductor single-crystal nanowire arrays is of importance for their applications in electronic and optoelectronic nanodevices. We prepare hexagonal ZnS single-crystal nanowire arrays growing along the [110] direction via electrodeposition. The thermal expansion properties of the as-prepared ZnS nanowires have been studied by in situ x-ray diffraction method. The thermal expansion coefficient (TEC) of the ZnS nanowires decreases consistently from room temperature to 225℃ where it reaches a minimum value, and then increases rapidly. The average TEC in the studied temperature range is 4.74 × 10-6/℃, which is smaller than that of the conventional bulk counterpart.