Study of glass transition kinetics of As_2S_3 and As_2Se_3 by ultrafast differential scanning calorimetry

作     者：Fan Zhang Yimin Chen Rongping Wang Xiang Shen Junqiang Wang Tiefeng Xu 张凡;陈益敏;王荣平;沈祥;王军强;徐铁峰

作者机构：Laboratory of Infrared Material and Devices & Key Laboratory of Photoelectric Materials and Devices of Zhejiang ProvinceAdvanced Technology Research Institute Ningbo University Department of Microelectronic Science and Engineering Faculty of Science Ningbo University CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application TechnologyNingbo Institute of Materials Technology & Engineering Chinese Academy of Sciences (CAS) Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第4期

页      面：349-352页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61775111,61775109,and 51771216) the Natural Science Foundation of Zhejiang Province,China(Grant No.LR18E010002) the International Cooperation Project of Ningbo City(Grant No.2017D10009) the One Hundred Talents Program of Chinese Academy of Sciences 3315 Innovation Team in Ningbo City the Magna Fund sponsored by K C Wong in Ningbo University,China 

主　　题：ultrafast DSC glass transition kinetics fragility index 

摘      要：Ultrafast differential scanning calorimetry(DSC) was employed to investigate the glass transition kinetics of As_2S_3 and As_2Se_3 . By using the Arrhenius method, a fragility index of～22 can be estimated in both As_2S_3 and As_2Se_3 .However, when the scanning rate is more than 200 K·s^(-1), non-Arrhenius behavior can be observed in such strong liquids where the Vogel–Fulcher method is more accurate to describe the glass transition kinetics. The fragilities of As_2S_3 and As_2Se_3 glasses are thus extrapolated as 28.3±1.94 and 23.7±1.80, respectively. This indicates that, As_2Se_3 glass has a better structural stability and it is a better candidate for device applications.