A NEW DC MODEL OF HBT INCLUDING SELF-HEATING EFFECT SUITABLE FOR CIRCUIT SIMULATORS

作     者：DUPUIS, J HAJJI, R GHANNOUCHI, FM SAAB, K LAVALLEE, S 

作者机构：Microwave Research Laboratory Department of Electrical and Computer Engineering École Polytechnique de Montréal Montreal QUE Canada 

出 版 物：《IEEE TRANSACTIONS ON ELECTRON DEVICES》 (IEEE Trans. Electron Devices)

年 卷 期：1995年第42卷第12期

页      面：2036-2042页

核心收录：

学科分类：0808[工学-电气工程] 08[工学] 0702[理学-物理学] 

基　　金：Department of Communications National Sciences and Engineering Council of Canada 

主　　题：Heterojunction bipolar transistors Electromagnetic heating Microwave transistors Circuit simulation Microwave circuits Microwave devices Parameter extraction Convergence Nonlinear equations Microwave theory and techniques 

摘      要：This paper presents a new empirical DC model which includes self-heating effects, The expression of the collector current does not explicitly incorporate the junction temperature of the device to aid convergence process and to simplify the equations involved, A comparison of simulated and experimental DC-IV characteristics over the ohmic and active regions demonstrates the accuracy of the model, This model is suitable for optimization purposes and has been implemented in nonlinear circuit simulators, HSPICE and HP-MDS.