THE IMPLEMENTATION OF PHYSICAL BOUNDARY-CONDITIONS IN THE MONTE-CARLO SIMULATION OF ELECTRON DEVICES

作     者：WOOLARD, DL TIAN, H LITTLEJOHN, MA KIM, KW 

作者机构：N CAROLINA STATE UNIVDEPT ELECT & COMP ENGNRALEIGHNC 27695 

出 版 物：《IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS》 (IEEE Trans Comput Aided Des Integr Circuits Syst)

年 卷 期：1994年第13卷第10期

页      面：1241-1246页

核心收录：

学科分类：0808[工学-电气工程] 08[工学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：Office of Naval Research  ONR 

主　　题：Boundary conditions Electron devices Distribution functions Monte Carlo methods Semiconductor devices Ohmic contacts Predictive models Gallium arsenide Semiconductor diodes Distributed computing 

摘      要：This paper investigates the problem of specifying and implementing physical boundary conditions for the Monte Carlo (MC) simulation of electron dynamics in semiconductor devices. The goal of this work is to establish an accurate and efficient ohmic boundary condition scheme for use in characterizing realistic device structures. In this work, three distinct physical models for specifying the boundary electrons at the ideal ohmic contacts of an N+ - N - N+ GaAs Ballistic diode structure are investigated. This study demonstrates that a displaced Maxwellian scheme, which allows for an electron ensemble with momentum space displacement and random spread, presents definite computational advantages when one is interested in resolving asymmetries in the electron distribution function throughout the semiconductor device structure.