A 2-TEMPERATURE TECHNIQUE FOR PECVD DEPOSITION OF SILICON DIOXIDE

作     者：HERMAN, JS TERRY, FL 

作者机构：Center for High Frequency Microelectronics Solid State Electronics Laborator Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA 

出 版 物：《IEEE ELECTRON DEVICE LETTERS》 (IEEE Electron Device Lett)

年 卷 期：1991年第12卷第5期

页      面：236-237页

核心收录：

学科分类：0808[工学-电气工程] 08[工学] 

基　　金：Army Research Office  ARO 

主　　题：Silicon compounds Plasma temperature Plasma chemistry Plasma density Plasma measurements Hydrogen Chemical vapor deposition Semiconductor films Dielectrics Plasma simulation 

摘      要：A new technique has been developed and analyzed for plasma-enhanced chemical vapor deposition (PECVD) silicon dioxide films which yields lower interface trap densities. First, a thin cap layer is deposited at a low temperature and the film is subjected to an in-situ hydrogen plasma treatment. Then the temperature is raised to the final value and the deposition continued to the desired thickness.