Quasi-Thermodynamic Model of MOVPE Growth of Ga_xAl_yIn_(1-x-y) N

作     者：陆大成 段树坤 

作者机构：中国科学院半导体研究所半导体材料科学实验室北京100083 中国科学院半导体研究所北京100083 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2001年第22卷第6期

页      面：677-683页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：国家重点基础 (973 )资助项目! (合同号 :G2 0 0 0 0 683 )&& 

主　　题：GaAlInN MOVPE thermodynamic group Ⅲ nitrides 

摘      要：***]A quasi-thermodynamic model of MOVPE growth of Ga xAl yIn 1-x-y N alloys has been proposed with TMGa,TMAl,TMIn and ammonia as *** this model,the effect of decomposition of ammonia has been con- sidered and the number of moles is used to express the mass conservation constraints of element N,H,Ga,Al and *** is assumed that the alloy is synthesized by the reactions between ammonia and group Ⅲ *** influence of growth conditions on the relationship between Ga xAl yIn 1-x-y N lattice matched to GaN and input group Ⅲ metalorganic compounds has been *** all the aluminum and gallium reaching the growing surface are incorporated in the *** order to enhance the incorporation of indium into Ga xAl yIn 1-x-y N,lower growth temperature and higher input Ⅴ/Ⅲ ratio should be used and the decomposed fraction of ammonia should be reduced.