Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

作     者：Chiaruttini, Francois Guillet, Thierry Brimont, Christelle Jouault, Benoit Lefebvre, Pierre Vives, Jessica Chenot, Sebastien Cordier, Yvon Damilano, Benjamin Vladimirova, Maria 

作者机构：Univ Montpellier CNRS L2C Pl Eugene Bataillon F-34095 Montpellier France Univ Cote Azur CNRS CRHEA Rue Bernard Gregory F-06560 Valbonne France 

出 版 物：《NANO LETTERS》 (纳米快报)

年 卷 期：2019年第19卷第8期

页      面：4911-4918页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 070304[理学-物理化学(含∶化学物理)] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：French National Research Agency via ANR OBELLX [ANR-15-CE30-0020-02] French National Research Agency via LABEX GANEX [ANR-11-LABX-0014] GANEX Agence Nationale de la Recherche (ANR) [ANR-15-CE30-0020] Funding Source: Agence Nationale de la Recherche (ANR) 

主　　题：exciton fluid electrostatic traps cooling gallium nitride 

摘      要：Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface. This result is a prerequisite for the electrical control of the exciton densities and fluxes, as well for studies of the complex phase diagram of these dipolar bosons at low temperature.