van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe2 as high performance contacts for WSe2 transistors

作     者：Bei Zhao Weiqi Dang Xiangdong Yang Jia Li Haihong Bao Kai Wang Jun Luo Zhengwei Zhang Bo Li Haipeng Xie Yuan Liu Xidong Duan 

作者机构：Hunan Key Laboratory of Two-Dimensional MaterialsState Key Laboratory for Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China School of Physics and ElectronicsHunan UniversityChangsha 410082China Center for Electron Microscopy Institute for New Energy Materials and Low-Carbon Technologies School of MaterialsTianjin University of TechnologyTianjin 300384China Hunan Key Laboratory of Super-microstructure and Ultrafast ProcessCollege of Physics and ElectronicsCentral South UniversityChangsha 410083China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2019年第12卷第7期

页      面：1683-1689页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：the financial support from the Fundamental Research Funds of the Central Universities (No.531107051078) the Double First-Class University In让iative of Hunan University (No.531109100004) the 111 Project of China (No.D17003) the support from the National Natural Science Foundation of China (No.751214296,51802090,61874041,and 61804050) Hunan Key Laboratory of Two-Dimensional Materials (No.801200005) 

主　　题：in situ growth nonlayered NiSe nanosheets Schottky barrier metal-semiconductor junctions chemical vapor deposition 

摘      要：A prerequisite for widespread applications of atomically thin transition metal dichalcogenides in future electronics is to achieve reliable electrical contacts,which is of considerable challenge due to the difficulties in selectively doping and inevitable physical damages of these atomically thin materials during typical metal integration ***,we report the in situ growth of ultrathin metallic NiSe single crystals on WSe2 in which the metallic NiSe nanosheets function as the contact electrodes to WSe2,creating an interface that is essentially free from chemical *** NiSe/WSe2 heterostructures also exhibit well-aligned lattice orientation between the two layers,forming a periodic Moire *** transport studies demonstrate that the NiSe nanosheets exhibit an excellent metallic feature,as evidenced by the extra-high electrical conductivity of up to 1.6×10^6 *** WSe2 transistors with the NiSe contact show field-effect mobilities (/vFe) more than double that with Cr/Au *** study demonstrates an effective pathway to achieve reliable electrical contacts to the atomically thin 2D materials,and maybe readily extended for fabricating 2D/2D low-resistance contacts for a variety of transition metal dichalcogenides.