Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance

作     者：Kang Liu Jiwen Zhao Huarui Sun Huaixin Guo Bing Dai Jiaqi Zhu 刘康;赵继文;孙华锐;郭怀新;代兵;朱嘉琦

作者机构：1Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information SystemHarbin Institute of TechnologyShenzhen 518055China Center for Composite Materials and StructuresHarbin Institute of TechnologyHarbin 150080China Science and Technology on Monolithic Integrated Circuits and Modules LaboratoryNanjing Electronic Devices InstituteNanjing 210016China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第6期

页      面：105-109页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61604049) the Shenzhen Municipal Research Project(Grant No.JCYJ20160531192714636) 

主　　题：GaN heteroepitaxy thermal conductivity transient thermoreflectance ultraviolet laser 

摘      要：Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance(TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.