Photo-induced optical changes in GexAs40Se60-x thin films

作     者：Rashmi CHAUHAN Amit Kumar SRIVASTAVA Arvind TRIPATHI Krishna Kant SRIVASTAVA 

作者机构：Department of Physic DAV CollegeKanpur 208001India Material Science Programme ⅡT Kanpur 208016India Epsilonium Systems Commercial ComplexChunniganjKanpur 208001India Department of Physics DBS CollegeKanpur 208006India 

出 版 物：《Progress in Natural Science:Materials International》 (自然科学进展·国际材料(英文))

年 卷 期：2010年第20卷第1期

页      面：54-60页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：UGC India for financial assistance 

主　　题：chalcogenide glasses thin films optical properties photo-induced effect optical band gap UV exposure R software 

摘      要：Ge-As-Se chalcogenide thin films show a wide range of photosensitivity,which is utilized for the fabrication of micro-optical elements for integrated *** photosensitivity of GexAs40Se60-x（x=0,15）chalcogenide thin films for UV light was *** that purpose,the bulk samples of GexAs40Se60-x（x=0,15）chalcogenide glasses were prepared using conventional melt quenching technique,and thin films were prepared using thermal evaporation *** thin films were exposed to UV light for two *** natures of bulk samples and thin films were verified by XRD and chemical compositions were verified by EDX *** thicknesses of the thin films were measured using a thickness *** optical analysis of these thin films was done using transmission spectra in wavelength range of 300-900 *** bandgap was determined by first peak of transmission derivative as well as extrapolation of Tauc s plot.R2analysis was done using R software to ensure that the material is indirect bandgap *** is observed that two hours UV exposure causes photo-darkening along with photo-expansion in As40Se60thin films,while photo-bleaching and photo-densification for Ge15As40Se45thin ***,the amounts of photo-induced optical changes for Ge15As40Se45thin films are smaller than those for As40Se60thin *** changes in optical absorption,bandgap and thickness are understood based on the bonding rearrangement caused by UV exposure.