Modulation of magnetic and electrical properties of bilayer graphene quantum dots using rotational stacking faults

作     者：Hong-Ping Yang Wen-Juan Yuan Jun Luo Jing Zhu 杨宏平;原文娟;罗俊;朱静

作者机构：National Center for Electron Microscopy in Beijing School of Materials Science and Engineering the State Key Laboratory of New Ceramics and Fine Processing Key Laboratory of Advanced Materials(MOE) Tsinghua University Beijing 100084 China Center for Electron Microscopy Institute for New Energy Materials & Low-Carbon Technologies School of Materials Science and Engineering Tianjin University of Technology Tianjin 300384 China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第7期

页      面：504-510页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11374174,51390471,51527803,and 51701143) the National Basic Research Program of China(Grant No.2015CB654902) the National Key Research and Development Program of China(Grant No.2016YFB0700402) the Foundation for the Author of National Excellent Doctoral Dissertation,China(Grant No.201141) the Tianjin Municipal Education Commission,China the Tianjin Municipal Science and Technology Commission,China the Fundamental Research Fund of Tianjin University of Technology 

主　　题：bilayer graphene quantum dots rotational stacking faults first-principles calculation 

摘      要：Bilayer graphene quantum dots with rotational stacking faults(RSFs) having different rotational angles were *** the first-principles calculation, we determined that these stacking faults could quantitatively modulate the magnetism and the distribution of spin and energy levels in the electronic structures of the *** addition, by examining the spatial distribution of unpaired spins and Bader charge analysis, we found that the main source of magnetic moment originated from the edge atoms of the quantum *** research results can potentially provide a new path for producing all-carbon nanodevices with different electrical and magnetic properties.