PHYSICAL ORIGIN OF THE INTRINSIC GRAIN-BOUNDARY RESISTIVITY OF STABILIZED-ZIRCONIA - ROLE OF THE SPACE-CHARGE LAYERS

作     者：GUO, X 

作者机构：WUHAN UNIV TECHNOL STATE KEY LAB SYNTH & PROC ADV MAT WUHAN 430070 PEOPLES REPUBLIC OF CHINA 

出 版 物：《SOLID STATE IONICS》 (固体离子)

年 卷 期：1995年第81卷第3-4期

页      面：235-242页

核心收录：

学科分类：07[理学] 070203[理学-原子与分子物理] 0703[理学-化学] 0702[理学-物理学] 

主　　题：SPACE CHARGE GRAIN-BOUNDARY RESISTIVITY ZIRCONIA 

摘      要：According to a space-charge theory analysis, the space-charge potential of YSZ is negative, which corresponds to an Y-Zr segregation and an V-O(..) depletion in the space-charge layers. Owing to the highly disordered structure of the grain-boundary interfaces, the resistance of the interfaces is considered to be negligible with respect to that of the space-charge layers, the intrinsic grain-boundary resistivity in stabilized-ZrO2 was thus considered to originate from the V-O(..) depletion in the space-charge layers, and an intrinsic grain-boundary resistivity model was developed. With this model, all the grain-boundary resistivity behaviors in stabilized-ZrO2 with high-purity described in the published litteratures were satisfactorily explained.