Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering

作     者：Khelifati, Nabil Laine, Hannu S. Vahanissi, Ville Savin, Hele Bouamama, Fatima Zohra Bouhafs, Djoudi 

作者机构：Res Ctr Semicond Technol Energet Dev Semicond Con Bd 2 Frantz FanonSept Merveilles BP 140 Algiers 16038 Algeria Aalto Univ Dept Micro & Nanosci Espoo 02150 Finland Ferhat Abbas Univ Setif 1 Campus El Bez Setif 19000 Algeria 

出 版 物：《PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE》 (固体物理学，A辑：应用与材料科学)

年 卷 期：2019年第216卷第17期

核心收录：

学科分类：07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：General Directorate for Scientific Research and Technological Development (DGRSDT/Algeria) 

主　　题：dissociation-association gettering iron-boron pairs phosphorus implantation silicon 

摘      要：Herein, the results of a systematic study on the kinetics of dissociation and formation of iron-boron (FeB) pairs in boron-doped Czochralski silicon after phosphorus implantation gettering of iron at different temperatures are reported. The aim herein is threefold: 1) investigation of the dissociation kinetics of the FeB pairs by standardized illumination as a function of iron concentration after the gettering process;2) study of the kinetics of their association;and 3) extraction of the characteristic parameters of these two phenomena for gettered samples, in particular the effective time constants of dissociation and association as well as the constant of material, which describes the dissociation rate well in the absence of other recombination channels.