Fast statistical delay evaluation of RC interconnect in the presence of process variations

作     者：李建伟 董刚 杨银堂 王增 

作者机构：Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesMicroelectronics InstituteXidian University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2010年第31卷第4期

页      面：104-108页

核心收录：

学科分类：08[工学] 081304[工学-建筑技术科学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0813[工学-建筑学] 

主　　题：process variations RC delay static delay 

摘      要：Fast statistical methods of interconnect delay and slew in the presence of process fluctuations are proposed. Using an optimized quadratic model to describe the effects of process variations, the proposed method enables closedform expressions of interconnect delay and slew for the given variations in relevant process parameters. Simulation results show that the method, which has a statistical characteristic similar to traditional methodology, is more efficient compared to HSPICE-based Monte Carlo simulations and traditional methodology.