Statistical theory of fatigue in ferroelectric devices

作     者：Paz De Araujo, C.A. Zuleeg, R. Mihara, T. Watanabe, H. Carrico, A. McMillan, L.D. Scott, J.F. 

作者机构：Microelectronics Research Laboratories Dept. of Electrical and Computer Engineering University of Colorado at Colorado Springs United States Olympus Optical Corporation Ltd. Tokyo Japan Dept. of Physics U. Fed. do R.G. do Norte Brazil Microelectronics Research Laboratories Dept. of Electrical and Computer Engineering University of Colorado at Colorado Springs United States Symetrix Corporation Colorado Springs Colorado United States Dept. of Physics University of Colorado Boulder United States 

出 版 物：《Integrated Ferroelectrics》 (Integr Ferroelectr)

年 卷 期：1992年第1卷第2-4期

页      面：305-322页

学科分类：080805[工学-电工理论与新技术] 080904[工学-电磁场与微波技术] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 0817[工学-化学工程与技术] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0802[工学-机械工程] 0811[工学-控制科学与工程] 0702[理学-物理学] 

基　　金：Navy SBlR 

摘      要：A simple model of fatigue in ferroelectric thin-films is developed from first principles. The core of the model is the distribution of pinning and coercive energies due to the polycrystalline nature of the material. Also, because domain nucleation for thin-films seem to be surface dominant, and surface space-charges are usually present, the model assumes that the pinning energies are field activated due to surface screening effects. The model is based on the well known two-state cluster theory in statistical physics. Further results from the model include the log (t) dependence of fatigue as a direct consequence of a gaussian distribution of pinning energies. And, for the first time a theoretical description of the V-1 dependence of fatigue is also described. The model is tested using fatigue data of sol-gel derived integrated (Si) PZT capacitors. © 1992, Taylor & Francis Group, LLC. All rights reserved.