OPERATION AND CHARACTERIZATION OF N-CHANNEL EPROM CELLS

作     者：BARNES, JJ LINDEN, JL EDWARDS, JR 

作者机构：American Microsystems Inc. 3800 Homestead Road Santa Clara CA 95051 U.S.A. 

出 版 物：《SOLID-STATE ELECTRONICS》 (固体电子学)

年 卷 期：1978年第21卷第3期

页      面：521-+页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0702[理学-物理学] 

摘      要：This paper describes the operation and characterization of N -Channel, double-polysilicon gate MOS structures that may be used in an Erasable, Programmable, Read-Only Memory (EPROM). The trade-offs for various structures with regard to writing ability, reading ability, fabrication complexity and ease of erasure are discussed. Measurements of the device are compared to the associated theory, and the sensitivity of the structure to various device parameters is also described.