Effects of Oxygen Flow on the Infrared Switching Properties of Vanadium Oxide Thin Films

作     者：Wang Yao Wu Zhiming Luo Zhenfei Wang Tao Jiang Yadong 

作者机构：School of Optoelectronic Information State Key laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China (UESTC). Chengdu 610054 China 

出 版 物：《Energy Procedia》 

年 卷 期：2011年第12卷

页      面：632-637页

主　　题：Infrared transmittance Optical phase transition temperature Vanadium oxide 

摘      要：Vanadium oxide (VOX) thin films have been deposited on glass substrates with different oxygen flows (3, 3.2, and 3.6 sccm) by means of magnetron sputtering process. We found that for different oxygen flows, the change of the infrared transmittance can be reached as high as 57%, the transmittance contrast factor can be reached as high as 88%,and the phase transition temperature is decreased to 54 oC, it is an ideal material for application in energy-efficient windows. According to the X-ray diffraction results of the thin films, we observed that with the increase of oxygen flow, VO2 (200) diffraction peak decreases obviously.