Benchmark tests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULK

作     者：牛旭东 李博 宋岩 张立宁 何进 

作者机构：Micro and Nano Electric Device and Integrated GroupThe Key Laboratory of Integrated MicrosystemsPeking University Shenzhen Graduate School TSRCKey Laboratory of MicroelectronicsDevices and Circuits of Ministry of EducationSchool of Electronics and Computer SciencePeking University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第3期

页      面：63-66页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Natural Science Foundation of China (No. 90607017) the Scientific Research Foundation for theReturned Oversea Chinese Scholars, State Education Ministry of China 

主　　题：compact model BSIM4 ULTRA-BULK circuit design continuity symmetry 

摘      要：This paper presents the benchmark test results on the symmetry and continuity characteristics between BSIM4 from Berkeley and ULTRA-BULK from Peking University. It is shown that the industry standard model BSIM4 has a series of the shortcomings of the continuity and symmetry, such as the charge, high-order current derivatives, and the trans-capacitances while the latest advanced surface-potential based MOSFET compact model, ULTRA-BULK, demonstrates all necessary continuity and symmetry characteristics, which are very important for analog and RF circuit design.