Tunnel Junction AlGaInP Light Emitting Diode

作     者：王国宏 沈光地 郭霞 高国 韦欣 张广泽 马骁宇 李玉璋 陈良惠 Wang Guohong;Shen Guangdi;Guo Xia;GAO Guo;Wei Xin;Zhang Guangze;Ma Xiaoyu;Li Yuzhang;Chen Lianghui

作者机构：北京工业大学信息学院北京市光电子技术实验室北京100022 中国科学院半导体研究所北京100083 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2002年第23卷第6期

页      面：628-631页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

主　　题：tunnel junction AlGaInP high brightness LED MOCVD 

摘      要：The n type GaAs substrates are used and their conductive type is changed to p type by tunnel junction for AlGaInP light emitting diodes(TJ LED),then n type GaP layer is used as current spreading *** resistivity of the n type GaP is lower than that of p type,the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n type GaP current spreading *** TJ LED with 3μm n type GaP current spreading layer,experimental results show that compared with conventional LED with p type GaP current spreading layer,light output power is increased for 50% at 20mA and for 66 7% at 100mA.