Ar/O₂ gas pressure dependence of atomic concentration of zirconia prepared by zirconium pulse arc PBII&D

作     者：Yukimura, K Yoshinaga, H Ohtsu, Y Fujita, H Nakamura, K Ma, XX 

作者机构：Doshisha Univ Dept Elect Engn Kyoto 6100321 Japan Saga Univ Dept Elect & Elect Engn Saga 8408502 Japan Chubu Univ Coll Engn Dept Elect Engn Kasugai Aichi 4878501 Japan Harbin Inst Technol Sch Mat Sci & Engn Harbin 150001 Peoples R China 

出 版 物：《NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS》 (物理学研究中的核仪器与方法，B辑：射束与材料及原子的相互作用)

年 卷 期：2006年第242卷第1-2期

页      面：318-320页

核心收录：

学科分类：08[工学] 0804[工学-仪器科学与技术] 0827[工学-核科学与技术] 0702[理学-物理学] 

主　　题：PBII&D zirconia coating X-ray photoelectron spectroscopy pulsed cathodic arc 

摘      要：Zirconium oxide films were prepared by plasma-based ion implantation and deposition (PBII&D), where a zirconium pulse arc discharge was generated in O-2/Ar gas mixture. The plasma was maintained for approximately 3 ins, and the ion current at the substrate was detected in a time range from 1 to 10 ins after the arc initiation. At O-2/Ar pressures of 2.6-3.0 Pa, a stoichiometric film was obtained, while at a pressure lower than 2.2 Pa, the film also contained ZrO, (x 2) phase as well as ZrO2 phase. In the absence of argon gas, the plasma became unstable, which resulted in shortage of zirconium ions in the plasma, and hence, a stoichiometric condition was not found. (c) 2005 Elsevier B.V. All rights reserved.