Improved Characteristics of HKMG MOS Capacitor with Different Ultrathin Interface Layers

作     者：WenJuan Xiong Jinjuan Xiang Wen Ou 

作者机构：Key Laboratory of Microelectronics Devices & Integrated Technology Chinese Academy of Sciences 3 Bei-Tu-Cheng West Road Chaoyang DistrictBeijing Beijing Beijing 100029 China Institute of Microelectronics Chinese Academy of Sciences 

出 版 物：《ECS Transactions》 

年 卷 期：2012年第44卷第1期

摘      要：In order to improve the HKMG interface states density and electrical characteristics, four different interface layers have been studied in this paper. They are 7Aå thickness of SiO2 produced by rapid thermal annealing process at 1000°C, 4Aå thickness of SiO2 produced by rapid thermal annealing process at 700°C, 10Aå thickness of silicon nitride produced by LPCVD process at 620°C, and 20Aå thickness of SiO2 produced by traditional horizontal furnace process at 830°C. It was found that there were two samples, the interface layers of 7Aå SiO2 and 10Aå silicon nitride, having excellent interface state density (1.5~1.7×1011cm-2ev-1) and gate leakage (3.1~3.5×10-7A). Considering the thinner equivalent oxide thickness (Eot), we choose 10Aå silicon nitride as the best one