ANALYTIC MODFET MODELS BEYOND THE TRIANGULAR WELL APPROXIMATION

作     者：DRUMMOND, TJ SHERWIN, ME 

作者机构：Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI 48109-2122 U.S.A. 

出 版 物：《SOLID-STATE ELECTRONICS》 (固体电子学)

年 卷 期：1990年第33卷第7期

页      面：885-891页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0702[理学-物理学] 

主　　题：Transistors, Field Effect 

摘      要：A new approach to modeling normal interface modulation doped field-effect transistors (MODFETs) is presented in which the 2-D electron gas density is integrated along the channel instead of the channel potential. With this approach we are able to implement a highly accurate polynomial description of the Fermi potential in the channel as a function of free electron density for arbitrary acceptor densities in GaAs channel. A substantial increase in the near threshold device current results. A carrier density dependent low field mobility is also incorporated into the model. These modifications are expected to result in an improved ability to estimate device characteristics from extrinsic material and device parameters.