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作者机构:Key Laboratory of Applied Surface and Colloid Chemistry Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials and School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 China. Dalian National Laboratory for Clean Energy and Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 China.
出 版 物:《ACS applied materials & interfaces》
年 卷 期:2020年第12卷第14期
页 面:16592-16600页
学科分类:0817[工学-化学工程与技术] 08[工学]
主 题:X-ray detector large size wafer optoelectronic properties perovskite sensitivity
摘 要:Lead halide perovskites with good optoelectronic properties and high attenuation of high-energy radiation are great candidates for X-ray radiation detectors. Large area, dense, and thick films or wafers are a prerequisite for these applications. In this paper, a one-step heat-assisted high-pressure press method is developed to directly prepare a large (the largest has a diameter of 80 mm) and thickness- and shape-controlled phase-pure organic-inorganic hybrid CHNHPbI wafer of densely packed large microcrystals from raw powder materials. Meanwhile, this method uses no solvent to achieve essentially 100% material utilization. The obtained wafers show good ambipolar carrier mobilities of ∼20 cm V s and a product as high as 3.84 × 10 cm V. Under an X-ray source using an acceleration voltage of 40 kV, the perovskite wafer-based X-ray detector shows an X-ray sensitivity as large as 1.22 × 10 μC Gy cm under a 10 V bias, the highest reported for any perovskite material. The method provides a convenient strategy for producing large perovskite wafers with good optoelectronic properties, which will facilitate the development of large perovskite devices.