Exchange Bias Effect in Ferro-/Antiferromagnetic van der Waals Heterostructures (vol 20, pg 3978, 2020)

作     者：Srivastava, Pawan Kumar Hassan, Yasir Ahn, Hyobin Kang, Byunggil Jung, Soon-Gil Gebredingle, Yisehak Joe, Minwoong Abbas, Muhammad Sabbtain Park, Tuson Park, Je-Geun Lee, Kyung-Jin Lee, Changgu 

作者机构：School of Mechanical Engineering Sungkyunkwan University Suwon 16419 Republic of Korea SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 Republic of Korea SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 Republic of Korea SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 Republic of Korea Center for Quantum Materials and Superconductivity (CQMS) Sungkyunkwan University Suwon 16419 Republic of KoreaDepartment of Physics Sungkyunkwan University Suwon 16419 Republic of Korea SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 Republic of Korea School of Mechanical Engineering Sungkyunkwan University Suwon 16419 Republic of Korea Department of Physics Sungkyunkwan University Suwon 16419 Republic of Korea Center for Quantum Materials and Superconductivity (CQMS) Sungkyunkwan University Suwon 16419 Republic of KoreaDepartment of Physics Sungkyunkwan University Suwon 16419 Republic of Korea Center for Correlated Electron Systems Institute for Basic Science Seoul 08826 Republic of KoreaDepartment of Physics and Astronomy Seoul National University Seoul 08826 Republic of Korea Department of Materials Science and Engineering Korea University Seoul 02841 Republic of KoreaKU-KIST Graduate School of Converging Science and Technology Korea University Seoul 02841 Republic of Korea School of Mechanical Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaSKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 Republic of Korea 

出 版 物：《NANO LETTERS》 (纳米快报)

年 卷 期：2020年第20卷第7期

页      面：5590-5590页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 070304[理学-物理化学(含∶化学物理)] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Basic Science Research Program through the National Research Foundation of Korea (NRF) [NRF-2012R1A3A2048816, 2016K1A1A2912707, 2016R1A2B4012931, 2016R1A6A3A11934734, 2018R1D1A1B07049669, 2020R1A2C2014687] Institute for Basic Science (IBS) in Korea [IBS-R009-G1] KISTI Grant [KSC-2018-CRE-0119] Global Frontier Research Center for Advanced Soft Electronics [CASE2013M3A6A5073173] Samsung Research Funding Center of Samsung Electronics [SRFC-MA1802-01] Institute for Information & Communications Technology Promotion (IITP) - Ministry of Science and ICT of Korea [B0117-16-1003] 

主　　题：exchange bias effect van der Waals magnets FM/AFM heterostructures magnetic anisotropy magnetic ordering electric field effect 

摘      要：The recent discovery of magnetic van der Waals (vdW) materials provides a platform to answer fundamental questions on the two-dimensional (2D) limit of magnetic phenomena and applications. An important question in magnetism is the ultimate limit of the antiferromagnetic layer thickness in ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures to observe the exchange bias (EB) effect, of which origin has been subject to a long-standing debate. Here, we report that the EB effect is maintained down to the atomic bilayer of AFM in the FM (Fe3GeTe2)/AFM (CrPS4) vdW heterostructure, but it vanishes at the single-layer limit. Given that CrPS4 is of A-type AFM and, thus, the bilayer is the smallest unit to form an AFM, this result clearly demonstrates the 2D limit of EB; only one unit of AFM ordering is sufficient for a finite EB effect. Moreover, the semiconducting property of AFM CrPS4 allows us to electrically control the exchange bias, providing an energy-efficient knob for spintronic devices.