Design and simulation of a universal N-bit binary encoder using single electron linear threshold gates

作     者：Rehan, Sameh Ebrahim 

作者机构：Mansoura Univ Commun & Elect Engn Dept Mansoura 35516 Egypt 

出 版 物：《MICROELECTRONICS JOURNAL》 (微电子学杂志)

年 卷 期：2012年第43卷第3期

页      面：205-215页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

主　　题：Single-electron nano-devices (SENDs) Tunnel junction (TJ) Linear threshold gate (LTG) Binary encoder Artificial neural network (ANN) Stability plots 

摘      要：The Single-Electron (SE) Linear Threshold Gate (LTG) is one of the basic functional Single-Electron Nano-Devices (SENDs). In this paper, using a SE LTG as the basic building block in an artificial neural network (ANN) is reviewed. A universal SE ANN 2-bit (4-to-2) binary encoder, which is composed of only two SE LTGs, is designed. The detailed schematic diagrams along with the corresponding SIMON 2 simulation results (that include input and output signals as well as the stability diagrams) of the designed binary encoder are included. The proposed SE ANN 2-bit binary encoder can easily be generalized to design n-bit binary encoders. As an example of this generalization, a SE ANN 3-bit (8-to-3) binary encoder, which is composed of three SE LTGs, is designed and its SIMON 2 simulation results are presented. This design is compared with the previously reported C-SET 3-bit binary encoder. (C) 2011 Elsevier Ltd. All rights reserved.