Probing photoelectrical transport in lead halide perovskites with van der Waals contacts

作     者：Wang, Yiliu Wan, Zhong Qian, Qi Liu, Yuan Kang, Zhuo Fan, Zheng Wang, Peiqi Wang, Yekan Li, Chao Jia, Chuancheng Lin, Zhaoyang Guo, Jian Shakir, Imran Goorsky, Mark Duan, Xidong Zhang, Yue Huang, Yu Duan, Xiangfeng 

作者机构：Univ Calif Los Angeles Dept Chem & Biochem 405 Hilgard Ave Los Angeles CA 90024 USA Hunan Univ Coll Chem & Chem Engn State Key Lab Chemo Biosensing & Chemometr Changsha Peoples R China Univ Calif Los Angeles Dept Mat Sci & Engn Los Angeles CA 90024 USA Univ Sci & Technol Beijing Beijing Adv Innovat Ctr Mat Genome Engn Beijing Key Lab Adv Energy Mat & Technol Beijing Peoples R China King Saud Univ Coll Engn Sustainable Energy Technol Ctr Riyadh Saudi Arabia 

出 版 物：《NATURE NANOTECHNOLOGY》 (自然纳米技术)

年 卷 期：2020年第15卷第9期

页      面：768-+页

核心收录：

学科分类：12[管理学] 1201[管理学-管理科学与工程(可授管理学、工学学位)] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Office of Naval Research [N00014-18-1-2707] US Department of Energy, Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-SC0018828] National Science Foundation [EFRI-1433541] National Key Research and Development Program of China [2018YFA0703503] National Natural Science Foundation of China International Scientific Partnership Program at King Saud University [ISPP-148] U.S. Department of Energy (DOE) [DE-SC0018828] Funding Source: U.S. Department of Energy (DOE) 

主　　题：Electronic devices Electronic properties and materials Semiconductors 

摘      要：Lead halide perovskites have attracted increasing interest for their exciting potential in diverse optoelectronic devices. However, their charge transport properties remain elusive, plagued by the issues of excessive contact resistance and large hysteresis in ambient conditions. Here we report a van der Waals integration approach for creating high-performance contacts on monocrystalline halide perovskite thin films with minimum interfacial damage and an atomically clean interface. Compared to the deposited contacts, our van der Waals contacts exhibit two to three orders of magnitude lower contact resistance, enabling systematic transport studies in a wide temperature range. We report a Hall mobility exceeding 2,000 cm(2) V-1 s(-1)at around 80 K, an ultralow bimolecular recombination coefficient of 3.5 x 10(-15) cm(3) s(-1)and a photocurrent gain 10(6)in the perovskite thin films. Furthermore, magnetotransport studies reveal a quantum-interference-induced weak localization behaviour with a phase coherence length up to 49 nm at 3.5 K. Our results lay the foundation for exploring new physics in this class of soft-lattice materials. The realization of high-quality van der Waals contacts on monocrystalline halide perovskite thin films enables the probing of their long-range carrier and photocarrier transport properties.