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内蒙古自治区呼和浩特市赛罕区大学西街235号 邮编: 010021
作者机构:Chinese Acad Sci Shanghai Inst Ceram Shanghai 201899 Peoples R China Shanghai Univ Sch Mat Sci & Engn Shanghai 200444 Peoples R China Univ Milano Bicocca Dept Mat Sci I-20125 Milan Italy Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100049 Peoples R China R&D Ctr Shanghai Inst Ceram Shanghai 201899 Peoples R China
出 版 物:《JOURNAL OF PHYSICAL CHEMISTRY C》 (物理化学杂志,C辑:纳米材料与界面)
年 卷 期:2020年第124卷第32期
页 面:17726-17732页
核心收录:
学科分类:081704[工学-应用化学] 07[理学] 070304[理学-物理化学(含∶化学物理)] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程(可授工学、理学学位)] 0703[理学-化学]
基 金:National Natural Science Foundation of China Science and Technology Commission of Shanghai Municipality [15DZ2251200]
主 题:Crystals Light Electrical conductivity Order Kinetics
摘 要:This paper presents a detailed study of the influence of yttrium (Y) concentration on thermally stimulated luminescence (TSL) of LYSO:Ce crystals and establishes the relationship between electron traps and scintillation properties. With the increase of Y concentration, the glow curve shifts toward higher temperatures and the trap depth increases gradually. Our results revealed two groups of electron traps with one shallow (E-t approximate to 0.10-0.26 eV) and one deep (E-t approximate to 1.00-1.21 eV). Our TSL results suggest that the amount of shallow traps varied with Y content has a positive correlation with energy resolution, while the amount of deep traps is inversely proportional to light output. In order to analyze the variation trend of trap depths and their mechanism in detail, we calculated the band gap with the PBE functional and VUV excitation spectra. The results show that the increase of band gap possibly leads to the increase of deep electron trap depth.