S-Matrix and Bandpass Negative Group Delay Innovative Theory of Ti-Geometrical Shape Microstrip Structure

作     者：Zhou, Xiang Gu, Taochen Wu, Lili Wan, Fayu Li, Binhong Murad, Nour Mohammad Lallechere, Sebastien Ravelo, Blaise 

作者机构：Southeast Univ Sch Mech Engn Nanjing 210096 Peoples R China Nanjing Univ Informat Sci & Technol Sch Elect & Informat Engn Nanjing 210044 Peoples R China Chinese Acad Sci Key Lab Silicon Device Technol Beijing 100029 Peoples R China Inst Univ Technol Energy Lab F-97410 St Pierre France Univ Clermont Auvergne Inst Pascal SIGMA Clermont F-63170 Aubiere France 

出 版 物：《IEEE ACCESS》 (IEEE Access)

年 卷 期：2020年第8卷

页      面：160363-160373页

核心收录：

基　　金：Opening Fund of Key Laboratory of Silicon Device and Technology, Chinese Academy of Sciences [KLSDTJJ2019-04] Postgraduate Research & Practice Innovation Program of Jiangsu Province [KYCX20-0966] 

主　　题：Topology Crosstalk Delays Couplings Integrated circuit modeling Attenuation Electromagnetic interference Crosstalk distributed structure Ti-topology microwave theory bandpass negative group delay (NGD) S-matrix theory 

摘      要：A theoretical investigation of distributed microwave circuit built with Ti-shape topology is developed. The topology under study consists of neighbored T- and i-shape interconnect lines. The Ti-topology equivalent S-matrix is calculated as a function of crosstalk coupling coefficient and coupled line (CL) delay. To highlight the NGD modelling feasibility, parametric analyses with respect to the T- and i-element coupling and delay are introduced. More practical validation is carried out with designed, simulated and measured microstrip prototype. It is found that because of T- and i-crosstalk, the Ti topology can behave as a bandpass NGD function. A good NGD performance with NGD level of approximately -1 ns around the center frequencies 2.2 GHz with transmission coefficient of approximately -2.1 dB and reflection coefficient better than -14 dB. The measured results are in good agreement with calculated models and simulations. Two-cell Ti-NGD circuits were also investigated to illustrate the designability of the topology for multi-band and widened single band NGD responses.