SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

专利申请号：US201816117956

公 开 号：US2019097020(A1)

发 明 人：ZHOU Fei 

申 请 日：20190328

公 开 日：20180830

专利主分类号：H01L29/66

摘      要：A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a substrate including a functional region and a blank region;and forming one or more active fins on the functional region of the substrate, and one or more sacrificial fins on the blank region of the substrate. The method also includes forming a dummy gate structure, across length portions of each active fin and each sacrificial fin;and forming an interlayer dielectric layer to fill a gap between adjacent dummy gate structures. In addition, the method includes forming a gate opening in the interlayer dielectric layer by removing the dummy gate structure. Further, the method includes removing at least a portion of the sacrificial fin in the gate opening;and forming a gate structure in the gate opening after removing the portion of the sacrificial fin in the gate opening.