Since sputtering phenomenon was first observed by Grove in 1852 in an experiment of electrical discharge at low pressure, it has shown a high feasibility for the production of thin films. After magnetron sputtering ap...
Since sputtering phenomenon was first observed by Grove in 1852 in an experiment of electrical discharge at low pressure, it has shown a high feasibility for the production of thin films. After magnetron sputtering apparatus was invented by Penning in 1936, its usefulness has gradually been recognized in industries. Nowadays, the sputtering method is one of the most important technologies particularly for the thin film fabrication in nano-scale engineering, for instance, ULSI and FPD device technology. In the present report, the recent improvement of the sputtering apparatus and new materials produced by the sputtering are surveyed. The interest is especially focused on the reactive sputtering. The merits of the sputtering method and the issues to be solved in industries are presented.
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