For thermally stable or high-temperature operating,Schottky contact utilizing refractory metal nitride,TiN,MoN and ZrN,on n-GaN were *** refractory metal nitride films were formed by reactive sputtering in Ar and N **...
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For thermally stable or high-temperature operating,Schottky contact utilizing refractory metal nitride,TiN,MoN and ZrN,on n-GaN were *** refractory metal nitride films were formed by reactive sputtering in Ar and N ***-voltage characteristics show that ideality factors of 1.09 - 1.22 and barrier heights of 0.66 - 0.75 eV was obtained for the three metal *** the ZrN contact,the ideality factor and barrier height of became 1.06 and 0.77 eV,respectively,after 800℃***/GaN heterostructure FET with TiN gate was also *** obvious degradation was found for the TiN-gate device even after thermal treatment at 850℃.This shows that Schottky contact utilizing refractory metal nitride on GaN has the potential for thermal stability or high-temperature operating.
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