AlGaN/GaN HEMTs are attracting considerable attention as high temperature,high-power and high-frequency devices for radar,avionics and wireless base-station transmitters,thanks to the unique material properties of Ⅲ-...
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AlGaN/GaN HEMTs are attracting considerable attention as high temperature,high-power and high-frequency devices for radar,avionics and wireless base-station transmitters,thanks to the unique material properties of Ⅲ-N ***,the comercializatio-n of these devices has been hampered by reliability *** commercialization,the failure mechanism of these devices under high temperature stress must be figured *** studies[1],[2] shown that a high mechanical stress develops under the drain-edge of the gate driven by a high electrical field,contributing to structural damage to the GaN cap and AlGaN ***,the structural damage caused by other reason has not been identified and reported.
The past decades have witnessed a tremendous advancement in the GaN-based light emitting diodes (LEDs) for general illumination *** we know,sapphire is one of the most common used substrate materials for GaN heteroepi...
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The past decades have witnessed a tremendous advancement in the GaN-based light emitting diodes (LEDs) for general illumination *** we know,sapphire is one of the most common used substrate materials for GaN heteroepitaxial ***,due to the large difference inthe lattice constant,crystal structure and thermal expansion coefficient,GaN layers grown on sapphire substrate exhibit substantial biaxial stress at the GaN/sapphire interface and high threading dislocation densities(TDDs)which in the range of 109-1011cm-2 in GaN epitaxial layers[1].
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