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Towards Nanosheet field Effect Transistors

Towards Nanosheet Field Effect Transistors

引用

international conference on Nanomaterials: Application & Properties (NAP)

作者： Arezki Benfdila Mohammed Djouder Ahcene Lakhlef Faculty of Electrical Engineering and Computer Sciences Mouloud Mammeri University Tizi-Ouzou Algeria Faculty of Technology Abderahmane Mira University Bejaia Algeria

ISBN: (数字)9798350380125

ISBN: (纸本)9798350380132

the present paper discusses the tendency of field Effect transistors (FETs) towards lower dimensional devices. they are drastically shrinking in size and tending to nano sheets form. this device shrinking is needed to remain in the More-than-Moore’s Law era and go down in technology nodes smaller than 3 nm. the tendency started by FinFETs, then GAAFETs, followed by NanoFETs and now Nanosheet FETs. this evolution supposes the node value to be a true 3D node. the advantage of this technology change is to have a better field control and device ON/OFF performances aiming very low power consumption. Based on our simulation results, it has been found that nano sheet devices are likely to take over for the next decade(s) and reduce the technology nodes based on the verticality of the technology. It has been concluded that three/four nanosheets FETs are likely to be the dominant device in the near future.

关键词： Performance evaluation three-dimensional displays Power demand Simulation field effect transistors Switches FinFETs CMOS technology Nanoscale devices

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A seamless DFT/FFT self-adaptive architecture for embedded radar applications 30

A seamless DFT/FFT self-adaptive architecture for embedded r...

引用

30th international conference on field-programmable logic and applications (FPL)

作者： Mazuet, Julien Narozny, Michel Dezan, Catherine Diguet, Jean-Philippe Thales LAS France Elancourt France UBO UBS Lab STICC CNRS Brest France

ISBN: (纸本)9781728199023

Radar is one of the domains where adaptability is paramount and algorithms must be adapted to system state. However, most systems include static implementations on FPGA or ASIC to process the massive amount of data from multiple sensors in parallel. the classic approach is to configure hardware logic through registers to switch radar modes, requiring to hardwire all configurations. In embedded systems, FPGA dynamic partial reconfiguration (DPR) is a promising solution to reuse scarce resources. In this paper, we use DPR for radar processing in order to switch between a classic discrete Fourier transform (DFT) sum and a fast Fourier transform (FFT) to enhance Doppler extraction. Our study explores the pros and cons of both methods. Based on these observations, we propose a new architecture and decision method that relies on Radar QoS for enabling an efficient self-adaptive solution. Finally, we provide a case study and a hardware-in-loop simulation with a reconfigurable radar implementation.

关键词： FPGA DPR radar QoS DFT

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Pentacene Based Organic Tunnel field Effect Transistor for Hybrid Working Environment

Pentacene Based Organic Tunnel Field Effect Transistor for H...

引用

international conference on Wireless Communications, Signal Processing and Networking (WiSPNET)

作者： Nivedha E Rajesh Agarwal Department of Electronics and Communication Engineering College of Engineering and Technology SRM Institute of Science and Technology Kattankulathur Tamilnadu India

ISBN: (数字)9798331524227

ISBN: (纸本)9798331524234

this paper proposes a compact gate Organic Tunnel field Effect Transistor (CG O-TuFET) using pentacene as semiconductor to improve the switching speed for working under hybrid (organic and inorganic) environments by analyzing its physical significance and performance. It examines crucial parameters and performs simulations using Silvaco TCAD tool. the parameters under study are same as in the Organic thin Film Transistor (OTFT) since both works as a transistor. the observed values of CG O-TuFET are threshold voltage (V th )= -1.4 V, average subthreshold swing (SS avg )=33.33 mV/dec for 7 decades, on-current of 65.16 µA, Current ON/OFF ratio=10 14 which are significant data for applications demanding high-speed operation within hybrid organic-inorganic environments.

关键词： Wireless communication Pentacene TFETs Signal processing logic gates Organic thin film transistors Remote working threshold voltage Transistors Switching circuits

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Effect of Electric field on the Moisture Equilibrium of Oil-Paper

Effect of Electric Field on the Moisture Equilibrium of Oil-...

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international conference on Properties and applications of Properties and applications of Dielectric Materials

作者： Hao Luo Zhiling Chen Wangjun Deng Xuetong Zhao Lijun Yang Li Cheng State Key Laboratory of Power Transmission Equipment Technology School of Electrical Engineering Chongqing University Chongqing China

ISBN: (数字)9798350374605

ISBN: (纸本)9798350386165

An accurate assessment of moisture content is important for the electrical insulation strength and aging life of the solid insulation inside the transformer. However, there is still a major reliance on the Oommen curves to indirectly calculate the moisture in paper, which only takes into account the effect of temperature and not the effect of the electric field. therefore, the experiment on the effect of direct current electric field (DCEF) on the moisture equilibrium characteristics of oil-paper is carried out in this work. Firstly, a tested platform with applied voltage and heating is constructed, then the moisture in oil and paper with different DCEF strengths under the same temperature is tested non-destructively and globally by using terahertz spectroscopy, and finally, the test results are compared with the Oommen curves for data comparison. the results show that when the paperboard samples with the same moisture content reach equilibrium, the applied DCEF is more moisture than that without DCEF, and the DCEF may inhibit moisture diffusion. Moreover, with the increase of the strength of DCEF, the more the average increment of the moisture. this study obtains the moisture equilibrium law of oil-paper under different DCEFs, which lays the foundation for correcting the Oommen curves and calculation equation.

关键词： Water Temperature distribution Spectroscopy Oils Moisture Voltage Oil insulation Solids Electric fields Power transformer insulation

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A Battery-connected Switched-Capacitor-based Power Step-Up Converter for V2G applications

A Battery-connected Switched-Capacitor-based Power Step-Up C...

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international conference on Electrical and Electronics Engineering, ELECO

作者： Hakan Tekin Göknur Setrekli Eren Murtulu Hikmet Karşıyaka Davut Ertekin Seger Sound and Electrical Devices Inc. Bursa Turkey Electrical and Electronics Engineering Research Laboratories Power Electronics Center Bursa Technical University Yıldırım Bursa Turkey

In this study, a novel power boost converter topology, which is characterized by a single-switch configuration and its connection to a battery, is introduced. the primary objective of this study is to explore its suitability for voltage enhancement in electrification transportation systems. An intrinsic advantage of the proposed converter lies in its ability to provide a continuous current output with a constrained magnitude, consequently reducing peak values on the battery input side current as a critical parameter impacting battery reliability and longevity. Furthermore, the gain achieved by this novel converter is substantial, rendering it a viable choice for high-voltage Vehicle-to-Grid (V2G) *** traditional boost converters, which usually produce an output voltage twice that of the input voltage with a duty cycle of 0.5, the suggested converter exceeds this by providing an output voltage five times higher than the input voltage. the validity of the theoretical framework is substantiated through mathematical derivations and simulation outcomes. To control the proposed converter effectively, a fuzzy logic controller is employed, chosen for its suitability in managing nonlinear systems and its simplicity of implementation.

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Analysis of Switching Characteristics of Wide SOA and High Reliability 100 v N-LDMOS Transistor with Dual RESURF and Grounded field Plate Structure 14

Analysis of Switching Characteristics of Wide SOA and High R...

引用

14th IEEE international conference on ASIC, ASICON 2021

作者： Kuwana, Anna Matsuda, Jun-Ichi Kobayashi, Haruo Gunma University Division of Electronics and Informatics Gunma376-8515 Japan

ISBN: (纸本)9781665411493

We proposed a wide SOA and high reliability 0.35 μm CMOS compatible 100 V dual RESURF LDMOS transistor with low switching loss and low specific on-resistance for automotive applications. this paper describes detailed switching characteristics by changing load resistance RL and gate resistance RG for actual use which were not investigated. TCAD simulations verified that the total energy loss (total switching loss + conduction loss) of the proposed device is sufficiently smaller (about 30 % down at the maximum) than that of the conventional device in most of the actual use range except for the following region: low duty cycle D 1.1 MHz at a low RG of 1.31 Ωmm2 and a high RL of 65.5 Ωmm2 under a device layout area of 1 mm2. Also, a unique switching characteristic of the proposed device, or a convex-shape gate plateau, not observed before, is analyzed. © 2021 IEEE.

关键词： Switching

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A Novel Hybrid Nonvolatile SRAM for Suppressing Leakage Power Using Tunnel FET 14

A Novel Hybrid Nonvolatile SRAM for Suppressing Leakage Powe...

引用

14th IEEE international conference on ASIC, ASICON 2021

作者： Hong, Xiaofeng Cai, Hao Southeast University National ASIC System Engineering Center Nanjing210096 China

ISBN: (纸本)9781665411493

A hybrid design proposal for nonvolatile (NV) SRAM bit-cell is implemented in this work. Magnetic tunnel junction (MTJ) and Tunnel field effect transistor (TFET) are hierarchically integrated for ultra low leakage (ULL) and low supply voltage (Vdd) operations. Typical NV-SRAM structures are investigated with TFET replacement. Utilizing AlGaSb/InAs broken-gap heterojunctions, a novel NV-TFET-SRAM with 8T1M structure is proposed. A sub-0.5V SRAM operations and 1.65pW leakage power are realized in this hybrid bit-cell, fulfilling the needs of ultra-low dynamic power and ultra-low-leakage Internet-of-things (IoT) applications. Operation modes including normal, store, restore and reset are configured in the MTJ/TFET based 8T1M bit-cell, for writing/sensing operations in both volatile (SRAM) and non-volatile memory (MTJ). MOSFET base sensing amplifiers are evaluated with TFET implementation, for further research of more energy efficient and reliable MTJ reading. © 2021 IEEE.

关键词： Tunnel field effect transistors

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Investigating Impact of Bit-flip Errors in Control Electronics on Quantum Computation

Investigating Impact of Bit-flip Errors in Control Electroni...

引用

international conference on VLSI Design

作者： Subrata Das Avimita Chatterjee Swaroop Ghosh School of EECS Pennsylvania State University University Park PA USA

ISBN: (数字)9798331522445

ISBN: (纸本)9798331522452

In this paper, we investigate the impact of bit-flip errors in FPGA memories in control electronics on quantum computing systems. FPGA memories are integral in storing the amplitude and phase information pulse envelopes, which are essential for generating quantum gate pulses. However, these memories can incur faults due to physical and environmental stressors such as electromagnetic interference, power fluctuations, and temperature variations and adversarial fault injections, potentially leading to errors in quantum gate operations. To understand how these faults affect quantum computations, we conducted a series of experiments to introduce bit flips into the amplitude (both real and imaginary components) and phase values of quantum pulses using IBM's simulated quantum environments, FakeValencia, FakeManila, and FakeLima. We compare the sensitivity of floating-point and fixed-point representations to these bit-flip errors. the findings reveal that bit flips in the exponent and initial mantissa bits of the real amplitude in floating- point representation cause substantial deviations in quantum gate operations, with TVD increases as high as ~ 200%. Conversely, fixed-point representation shows reduced sensitivity to bit-flips, offering a more robust alternative for certain applications. these in- sights can guide the selection of data representations to enhance the robustness of quantum computing systems from hardware faults.

关键词： Quantum computing Sensitivity Fluctuations logic gates Very large scale integration Reliability engineering Robustness Hardware field programmable gate arrays Resilience

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A Simple Frequency Selective Surface based Polarization Convertor for X-band applications

A Simple Frequency Selective Surface based Polarization Conv...

引用

international conference on Computing and Networking Technology (ICCNT)

作者： S. Anandh P. Pavithra S. Piramasubramanian M. Ganesh Madhan Department of Electronics Engineering Madras Institute of Technology Chennai India

A simple microwave Frequency Selective Surface comprising of copper and FR4 layers is simulated, fabricated, and tested for Linear Polarization Conversion. the FSS structure is typically a unit cell that consists of a square patch of 10 mm with a diagonal cut on FR-4 substrate which is placed over a metallic ground of 0.035 mm, for reflective type conversion. the proposed design is simulated using CST microwave studio and fabricated. the FSS is experimentally verified using microwave test bench and is found to be stable with changes in incident angle upto 50 o . the simulation results show Polarization Conversion Ratio of more than 85% over a broad range of 4 GHz (8.25 GHz to 12.25 GHz). On further investigation on experimental analysis, maximum Polarization Conversion Ratio of 83% is achieved over a broad range when transmitter and receiver horn is at a far-field distance from FSS.

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Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches 14

Advances in Modeling Emerging Magnetoresistive Random Access...

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14th international conference on Micro- and Nano-Electronics 2021, ICMNE 2021

作者： Ender, Johannes Fiorentini, Simone de Orio, Roberto L. Hadámek, Tomáš Bendra, Mario Goes, Wolfgang Selberherr, Siegfried Sverdlov, Viktor Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic The TU Wien Gußhausstr. 27-29 Vienna1040 Austria Institute for Microelectronics TU Wien Gußhausstr. 27-29 Vienna1040 Austria Silvaco Europe Cambridge United Kingdom

ISBN: (数字)9781510651913

ISBN: (纸本)9781510651906

Emerging spin transfer torque magnetoresistive random access memories (STT MRAM) are nonvolatile and offer high speed and endurance. they are promising for stand-alone and embedded applications in the automotive industry, microcontrollers, Internet of things, frame buffer memory, and slow SRAM. the MRAM cell usually includes a CoFeB fixed reference layer and a free magnetic layer (FL), separated by a tunnel barrier. To design ultra-scaled MRAM cells it is necessary to accurately model the torques acting on the magnetization in composite magnetic layers with one or several nonmagnetic inclusions between the ferromagnetic parts. the magnetization dynamics is governed by the Landau-Lifshitz-Gilbert (LLG) equation supplemented with the corresponding torques. the torques depend on nonequilibrium spin accumulation generated by an electric current. the electric current and the spin accumulation also depend on the magnetization. therefore, the LLG and the spin-charge transport equations are coupled and must be solved simultaneously. We apply the finite element method (FEM) to numerically solve this coupled system of partial differential equations. To develop an open source solver, we use well-developed C++ FEM libraries. the computationally most expensive part is the demagnetizing field calculation. It is performed by a hybrid finite element-boundary element method. this confines the simulation domain for the field evaluation to the ferromagnets only. Advanced compression algorithms for large, dense matrices are used to optimize the performance of the demagnetizing field calculation in complex structures. To evaluate the torques acting on the magnetization, a coupled spin and charge transport approach is implemented. For the computation of the torques acting in a magnetic tunnel junction (MTJ), a magnetization-dependent resistivity of the tunnel barrier is introduced. A fully three-dimensional solution of the equations is performed to accurately model the torques acting on

关键词： MRAM devices

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