In this paper, a Distributed Active Transformer (DAT) is used to implement a fully-integrated RF power amplifier (PA) for the extended GSM-band and LTE band VIII in a standard 90 nm CMOS process. the DAT allows the de...
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this paper presents a 3-5 GHz ultra-wideband radio front-end for low data-rate wireless personal area network applications. the circuit, implemented in a 90-nm CMOS technology, includes a carried-based ultra-wideband ...
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this paper presents a 3-5 GHz ultra-wideband radio front-end for low data-rate wireless personal area network applications. the circuit, implemented in a 90-nm CMOS technology, includes a carried-based ultra-wideband transmitter, a sub-optimal coherent down-converter and a low-power LO signal generator. thanks to a pseudo-Gaussian pulse generator, the transmitter is able to run up to 500 Mpps satisfying the FCC mask requirements with no filter and high spectral efficiency. the down-converter exploits a single-ended low-noise amplifier to minimize power consumption. It also performs on-chip single-ended-to-differential conversion of the RF signal by using an integrated transformer. the down-converter exhibits a 23-dB conversion gain and a double-sideband noise figure of 3.4 dB. the LO signal is generated by a low-power wideband LC VCO, which draws only 1.5 mA. the current consumption of the radio front-end is 15 mA in receive mode and 24 mA in transmit mode.
the proceedings contains 26 papers from the 20theuropeanconference on masktechnology for integratedcircuits and microcompounds. Topics discussed include: determining the transfer function of a mask fabrication pro...
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the proceedings contains 26 papers from the 20theuropeanconference on masktechnology for integratedcircuits and microcompounds. Topics discussed include: determining the transfer function of a mask fabrication process;towards systematic CD process control for e-beam lithography;optimized processes and absorber-stack materials for EUV masks;investigation of Cr etch chamber seasoning;metrological characterization of new CD photomask standards;dynamic mask defects in hot embossing lithography and predicting microfluidic response during immersion lithography scanning.
this Volume 5148 of the conference proceedings contains 33 papers. Topics discussed include optical proximity correction, mask industry, metrology, defect printability and repair, inspection, data flow and process aut...
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this Volume 5148 of the conference proceedings contains 33 papers. Topics discussed include optical proximity correction, mask industry, metrology, defect printability and repair, inspection, data flow and process automation and mask optimization.
One of the most critical steps for photomask CD off-target is the patterning of the mask. Here the instability of the dry etch process contributes directly to the stability of the CD value. the increasing demands on h...
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ISBN:
(纸本)0819454370
One of the most critical steps for photomask CD off-target is the patterning of the mask. Here the instability of the dry etch process contributes directly to the stability of the CD value. the increasing demands on high-end masks cause a narrowing of bothmask CD off-target and CD uniformity specifications, and accordingly the process stability has to be improved to fulfil these criteria. In this work we investigated the correlation between hardware parameters, basic etch process parameters and the corresponding CD mean-to-target value. Correlations between CD mean-to-target and Cr etch rate as well as effects of chamber seasoning after wet cleans are discussed.
the data volumes of individual files used in the manufacture of modern integratedcircuits have become unmanageable using existing data formats specifications. the ITRS roadmap indicates that single layer MEBES files ...
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ISBN:
(纸本)0819454370
the data volumes of individual files used in the manufacture of modern integratedcircuits have become unmanageable using existing data formats specifications. the ITRS roadmap indicates that single layer MEBES files in 2004 exceed 200 GB threshold, worst case. OASIS, the new stream format developed under the sponsorship of SEMI, has been approved in the industry-wide voting in June 2003. the new format that on average will reduce the file size by an order of magnitude, enables to streamline data flows and provides increased efficiency in data exchange. the work to implement the new format into software tools is in progress. this paper gives an overview on the new format, reports results on data volume reduction and is a report on the status and benefits the new format can deliver. A data flow relying on OASIS as the input and transfer format is discussed.
Nanoimprint was performed in very thin layers of polystyrene (PS) in order to define a mask with minimum CD loss for a subsequent etch process at minimum etching time for opening of the mask windows after imprinting. ...
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ISBN:
(纸本)0819454370
Nanoimprint was performed in very thin layers of polystyrene (PS) in order to define a mask with minimum CD loss for a subsequent etch process at minimum etching time for opening of the mask windows after imprinting. the initial polymer layer thickness was chosen as to fill the stamp cavities with nearly no surplus of polymer material. the residual layers after imprint were in the range of 50 nm and could be cleared at 50% overetch within 90 s in an oxygen RIE step. As there was not enough polymer material available for a complete filling of the cavities when a residual layer remains, filling defects occurred. High imprint temperature and thus low viscosity led to formation of deep defects in the imprint and thus the mask to be formed by embossing. Lift off experiments revealed that within the defective regions the remaining polymer layer thickness was smaller than the imprinted residual layer. In order to avoid such mask defects the imprint temperature had to be reduced.
Contact layers of the DRAM manufacturing process can be printed well using alternating phase-shifting masks. State-of-the-art mask making tools have sufficient performance to manufacture defect free contact masks. the...
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ISBN:
(纸本)0819454370
Contact layers of the DRAM manufacturing process can be printed well using alternating phase-shifting masks. State-of-the-art mask making tools have sufficient performance to manufacture defect free contact masks. the enlarged process window compared to conventional masks allows to shrink the contacts size or to substitute advanced scanners by older generation steppers for contact layer patterning. Using older generation exposure systems may cause problems originating in worse lens aberration performance. A method will be described how to overcome overlay problems by applying a specifically designed OL measurement target.
the Leica SB350MW 50keV shaped-beam e-beam lithography tool was used to write large-area 1X templates applicable in Step and Flash Imprint Lithography (S-FIL)(1). this paper describes how information from the pattern ...
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ISBN:
(纸本)0819454370
the Leica SB350MW 50keV shaped-beam e-beam lithography tool was used to write large-area 1X templates applicable in Step and Flash Imprint Lithography (S-FIL)(1). this paper describes how information from the pattern analysis can be used to define the ZEP7000 resist exposure optimization technique for the SB350 MW2 tool together withthe Motorola template pattern transfer process(3.15) to obtain final template images in the transparent template. As a result of the complete process, well-resolved trenches measuring 33nm and contacts as small as 44nm were obtained. Further improvements in the resist patterning will be possible by an adaptation of our standard proximity corrector (currently used in the 90nm node maskmaking) with a high resolution upgrade.
Currently, EUV lithography targets for sub-50 nm features. these very small feature sizes are used for reflective illumination and impose great challenges to the mask maker since they do not allow a simple downscaling...
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ISBN:
(纸本)0819454370
Currently, EUV lithography targets for sub-50 nm features. these very small feature sizes are used for reflective illumination and impose great challenges to the mask maker since they do not allow a simple downscaling of existing technologies. New material combinations for absorber and buffer layer of EUV masks have to be evaluated and fundamental material limits have to be overcome. We report on optimized absorber-stack materials and compare in particular the performance of chrome and tantalum nitride for such small nodes. Tantalum nitride shows similar or even better properties than standard chrome, above all with respect to etch bias. Further investigations have to be done but this material is a promising candidate for feature sizes in the sub-50 nm range.
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