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15th european conference on mask technology for integrated circuits and microcomponents

作者： Butschke, J Ehrmann, A Haugeneder, E Irmscher, M Käsmaier, R Kragler, K Letzkus, F Löschner, H Mathuni, J Rangelow, IW Reuter, C Shi, F Springer, R Inst Mikroelekt Stuttgart D-70569 Stuttgart Germany

ISBN: (纸本)0819431397

Two process flows for the fabrication of stencil masks have been developed. the PN Wafer Flow- and the SOI Wafer Flow Process. Membranes and stencil masks out of different 6" Si base wafers with 3 mu m membrane thickness and a membrane diameter between 120mm and 126mm were fabricated. the membrane stress depending on the material property and doping level has been determined. First metrology measurements have been carried out.

关键词： Etching Semiconducting wafers Silicon Photomasks Oxides Electrochemical etching Metals Ions Lithography Wafer bonding

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Pattern placement metrology tool matching within DPI's sites

Pattern placement metrology tool matching within DPI's sites

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15th european conference on mask technology for integrated circuits and microcomponents

作者： Talene, N Röth, KD Dupont Photomasks France ZI Rousset France

ISBN: (纸本)0819431397

the requirements of the 0.18 mu m and 0.25 mu m technologies lead to advanced specifications for the mask making technology in terms of pattern placement metrology, tighter than 52nm (3s) for the 0.25 mu m generation and around 35nm (3s) for the next 0.18 mu m generation. In addition, the tremendous demand regarding cycle time reduction, performance to delivery schedule, and technical complexity on products impose to the mask manufacturer like Dupont Photomasks Inc. (DPI) the necessity to mix and match products between all the DPI sites. From this perspective, the matching of all the pattern placement metrology tools of all DPI production sites is mandatory. In order to control the tight specifications, the strategy for metrology is to implement a unique grid for registration on a world wide base at DPI and to calibrate all metrology tools and all writing tools to this standard grid. All investigations were performed on the LEICA LMS IPRO tools using the new correction software from Leica Microsystems.

关键词： Metrology Photomasks Calibration Manufacturing Lithography mask making Overlay metrology Semiconductors Microsystems Standards development

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PN and SOI wafer flow process for stencil mask fabrication

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Proceedings of SPIE - the International Society for Optical Engineering 1999年 3665卷 20-29页

作者： Butschke, J. Ehrmann, A. Haugeneder, E. Irmscher, M. Kaesmaier, R. Kragler, K. Letzkus, F. Loeschner, H. Mathuni, J. Rangelow, I.W. Reuter, C. Shi, F. Springer, R. Inst fuer Mikroelektronik Stuttgart Stuttgart Germany

Two process flows for the fabrication of stencil masks have been developed. the PN Wafer Flow- and the SOI Wafer Flow Process. Membranes and stencil masks out of different 6 inches Si base wafers with 3 μm membrane thickness and a membrane diameter between 120 mm and 126 mm were fabricated. the membrane stress depending on the material property and doping level has been determined. First metrology measurements have been carried out.

关键词： Lithography

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Initial results from a Leica ZBA31H+shaped e-beam mask writer located at the Photronics advanced mask shop in Manchester, England.

Initial results from a Leica ZBA31H+shaped e-beam mask write...

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15th european conference on mask technology for integrated circuits and microcomponents

作者： Johnson, S Marshall, P Osborne, P Doering, HJ Ehrlich, C Photron UK Ltd Manchester Lancs England

ISBN: (纸本)0819431397

Since Production started at the Photronics site in Manchester, England, mask writing capability had been centred on laser based technology (Etec CORE/ALTA toolsets). the Manchester site has now taken delivery of it's first e-beam system: the ZBA 31H+, manufactured by Leica Microsystems Lithography GMBH. the ZBA 31H+ system was designed for the production of reticles utilizing 250 nanometer design technology and is expected to play a key role in Photronics' future reticle development. the addition of an e-beam system to the current laser based technology, in this instance, has been driven by increasing customer demand and the requirement for reticles containing high resolution OPC structures. the ZBA 31H+ is a variable shaped spot, vector scan electron beam lithography system operating at 20 keV. Enhancements from the previous generation system include improved deflection systems, stage metrology, pattern data handling, and an address grid down to 10 nanometers. this system's specified performance enables it to produce reticles designed to support semiconductor fabrication utilizing 250 nanometer design rules, and beyond, with high accuracy and productivity.

关键词： Electron beam lithography

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Development of an algorithm for monitoring of pattern fidelity on photomasks for 0.2μm technology and beyond based on light optical CD metrology tools

Development of an algorithm for monitoring of pattern fideli...

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15th european conference on mask technology for integrated circuits and microcomponents

作者： Schätz, T Hay, B Walden, L Ziegler, W Siemens AG Semicond Grp Mask Shop Munich D-8000 Munich Germany

ISBN: (纸本)0819431397

With the ongoing shrinking of design rules, the complexity of photomasks does increase continuously. Features are getting smaller and denser, their characterization requires sophisticated procedures. Looking for the deviation from their target value (CD-offtarget) and their linewidth variation (CD-uniformity) is not sufficient any more. In addition, measurements of corner rounding and line end shortening are necessary to define the pattern fidelity on the mask. Otherwise printing results will not be satisfying. Contacts and small features are suffering mainly from imaging inaccuracies. the size of the contacts as an example may come out too small on the photomask and therefore reduces the process window in lithography. In order to meet customer requirements for pattern fidelity, a measurement algorithm and a measurement procedure (e.g. implementing of test patterns on critical layers) needs to be introduced and specifications to be defined. In this paper different approaches are compared, allowing an automatic qualification of photomasks by optical light microscopy based on a MueTec CD-metrology system, the newly developed MueTec 2030UV, provided with a 365 nm light source (i-line). the i-line illumination allows to resolve features down to 0.2 mu m size with good repeatability.

关键词： Photolithography

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through the looking glass: What is on the horizon for the mask Maker?

Through the looking glass: What is on the horizon for the Ma...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Mackay, RS Eynon, BG Mathur, DP Photron Inc Austin TX 78728 USA

ISBN: (纸本)0819450189

the future of mask industry technology is in flux. While the requirements for current and near-term lithographic capability is well understood, advanced lithography options pose a completely new set of challenges to the mask maker. Challenges are not only process and materials related, but also include more fundamental concerns dealing with how to afford the necessary capability development. this paper identifies the issues and attempts to propose solutions to the industry's growing concerns.

关键词： Photomasks Manufacturing Lithography Extreme ultraviolet lithography Glasses mask making Pellicles Inspection Optical lithography Semiconducting wafers

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mask definition by nanoimprint lithography

Mask definition by nanoimprint lithography

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Lyebyedyev, D Scheer, HC Univ Gesamthsch Wuppertal Dept Elect & Informat Engn D-42119 Wuppertal Germany

ISBN: (纸本)0819440396

mask definition was performed by use of nanoimprint lithography and subsequent reactive ion etching in an oxygen plasma. Polystyrene was chosen as a polymer mask material. Different features ranging from 400 nm up to 4 mum were produced in the polymer layer by nanoimprint. Optimisation of the residual layer removal process in oxygen RIE was performed at different pressures and self-bias voltages. Low pressure and high bias voltage are required for high quality mask definition.

关键词： Polymers Nanoimprint lithography Oxygen Photomasks Reactive ion etching Etching Scanning electron microscopy Lithography Plasma Dry etching

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Charged particle beam induced processes and its applicability to mask repair for next generation lithographies

Charged particle beam induced processes and its applicabilit...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Koops, HWP T Nova Deutsch Telekom Technologiezentrum Darmsta D-64295 Darmstadt Germany

ISBN: (纸本)0819440396

A comparison of the achievements of charged particle beam induced processes as published is evaluated to judge on the applicability of this technology for Next Generation Lithography mask repair. Methods for repair of defects of different types on different masks are reviewed. this compares the achievements of ion beam technologies as well as of electron beam technologies. With these techniques the properties of the deposited materials for open defect repair can be selected using different precursors, currents, temperatures and voltages for the deposition process. Very high resolution is achievable. For opaque defects the etching and trimming of a surplus of absorber or scattering material with electrons or ions is compared.

关键词： Ion beam lithography

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Inspection of alternating PSM reticles using UV-based 365 nm reticle inspection tool

Inspection of alternating PSM reticles using UV-based 365 nm...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Rosenbusch, A Har-zvi, M Gottlib, G Etec Syst Inc Appl Mat Co Hayward CA 94545 USA

ISBN: (纸本)0819445312

the paer presents results of a thorough study using the UV-based die-to-database mask inspection system ARIS(TM) 100i for the inspection of alternating phase shifting masks (AAPSM) designed for KrF (249nm) technology. A specially designed test mask was used to investigate sensitivity limitations of the i-line tool. Main focus is on phase errors. which were treated as a function ot'defect size, phase, and mask location.

关键词： phase shift mask 248 nm AAPSM i-line inspection mask inspection reticle enhancement technique (RET)

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mask CD uniformity impact during incoming quality control

Mask CD uniformity impact during incoming quality control

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Villa, E Baracchi, E Rosenbusch, A Har-zvi, M Gottlib, G STMicroelect I-20041 Agrate Brianza MI Italy

ISBN: (纸本)0819445312

the paper presents the use of the Linewidth Bias Monitor (LBM), the critical dimension (CD) uniformity mapping option of the ARIS(TM)21i die-to-database mask inspection system, for incoming quality control (IQC) in the wafer fab. LBM is qualified for this purposes by comparing it's quantitative results with CD measurements. masks, provided by different commercial vendors, are evaluated based on the LBM maps obtained during mask inspection. Mean-to-target and 3-sigma values are evaluated and compared.

关键词： Photomasks Critical dimension metrology Semiconducting wafers Inspection Reticles Control systems Metrology Quality systems Wafer inspection Cadmium

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