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检索条件"任意字段=15th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

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the impact of EUV mask defects on lithographic process performance

The impact of EUV mask defects on lithographic process perfo...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Evanschitzky, P Erdmann, A Fraunhofer Inst Integrated Syst & Device Technol D-91058 Erlangen Germany

ISBN: (纸本)0819454370

As the options for experimental studies are still limited, a predictive simulation of EUV lithography (extreme ultraviolet lithography) is important for a better understanding of the technology. In particular, the simulation of defective EUV masks is a fundamental task because of the significant impact of certain defects on the lithographic process. the description of such a defective mask is one of the most critical issues for the modeling of EUV lithography. A new model for the simulation of defects inside the multilayer of an EUV reflective mask, developed at Fraunhofer IISB, is used for the presented study. the model consists of a combination of a rigorous electromag-netic field (EMF) computation and an analytical thin film computation. Compared to other methods, such as fully rigorous EMF simulations, this new approach leads to a significant reduction of computation time and memory requirements. the model can be applied to two and three dimensional defects and masks. this paper will present a detailed study of the impact of EUV mask defects on the near fields, the aerial images, and the process windows. Typical mask structures, e. g. 3D contact holes and 2D lines with various defects, are investigated. Defect parameters, such as the defect position with respect to the main feature to be imaged, the defect height, the defect FWHM (full width at half maximum), and the number of compressed layers inside the multilayer are varied. the important defect parameters and their critical ranges are identified using the new simulation method. the impact of these parameters on the image CD and the image position are demonstrated.

关键词： EUV mask multilayer defects lithography simulation

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Production challenges of making an EUV mask blank

Production challenges of making an EUV mask blank

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Aschke, L Becker, H Friemel, F Leutbecher, T Olschewski, N Renno, M Rüggeberg, F Schiffler, M Schmidt, F Sobel, F Walter, K Hess, G Lenzen, F Knapp, K Schott Lithotec AG D-98617 Meiningen Germany

ISBN: (纸本)0819454370

mask Blanks for EUV Lithography require a lot of new properties and features compared to standard COG blanks. Starting from completely new low thermal expansion substrate materials with significantly improved surface quality over multilayer coatings for EUV reflection, buffer layers, up to new absorber layers with improved dry etching and inspection properties. this papers introduces in the special features of Low thermal Expansion Materials (LTEM), their manufacturing and the special metrology for the Coefficient of thermal Expansion (CTE). We will look into some details of polishing methods for much better flatness of the substrates. the process and the metrology of low defect EUV multilayer coatings will be elucidated and some aspects of this will be explained in detail. In addition we will present new results from no-chrome alternative absorber materials.

关键词： Extreme ultraviolet Photomasks Multilayers Extreme ultraviolet lithography Zerodur Reflectivity Polishing Glasses Surface finishing Temperature metrology

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Looking back: Artwork and mask making in Dresden for the East German megabit chip project

Looking back: Artwork and mask making in Dresden for the Eas...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Becker, HW Fraunihofer Inst Photon Mikrosyst IPMS D-01109 Dresden Germany

ISBN: (纸本)0819454370

After the early mask making during the 1960's in Dresden has been discussed at the 19(th) EMC now the view is focused to the further mask making efforts in Dresden, where the leading East German labs for research and development of microelectronics had been located. the mask making processes developed continuously, but one can recognize some different periods. First a three-stage process realized artwork originals - reticles - masks. then a two-stage process realized reticles - masks. In the end a one-stage process realized only the reticles which were applied to the wafers by means of a waferstepper. technology and equipment of the mask processes were developed in cooperation with other East German companies such as Carl Zeiss Jena. Some examples for microlithographic equipment are given. Finally, late in the 1980's, a high technology equipment existed in Dresden which met the microlithographic challenges of a Megabit DRAM technology: chip size of about 13 nun x 5 mm, minimum features of about 1 mum. mask making occured with the e-beam writer ZBA21, mask application was carried out with the waferstepper AUR. the specific parameters are listed and the arrangement of the chip design (1MbitDRAM chip U61000) on the reticle is discussed with respect to the image field conditions. Some pictures show the ground plan of the reticles and the reticle masks, which were made on chromium coated glass blanks 125 mm x 125 mm.

关键词： microelectronics artwork mask making Eastern Bloc history

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Avoidance reduction of charging effects in case of partially insufficient substrate conductivity when using ESPACER 300Z

Avoidance reduction of charging effects in case of partially...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Plontke, R Bettin, L Beyer, D Butschke, J Irmscher, M Koepernik, C Leibold, B Vix, A Voehringer, P Leica Microsyst Lithog Jena Germany

ISBN: (纸本)0819454370

the aim is to apply e-beam lithography for second level imaging of Alternating Phase Shift masks (altPSM) in the 65nm node and below. Difficulties due to charging effects arise when exposing areas where the chromium absorber has been cleared away. In order to achieve correct pattern placement, the commercial water-soluble conductive ESPACER 3002 top coat from Showa Denka is applied in combination with chemically amplified resist of type FEP171. the paper describes the method and algorithm to test the efficacy of the material and the technological steps taken to avoid or reduce charge effects. the obtained overlay accuracy proves the ESPACER/FEP171 combination a promising approach for future altPSM manufacturing.

关键词： alternating phase shift mask second level imaging charging electron beam exposure chemically amplified resist

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Effect of electrostatic chucking on EUVL mask flatness

Effect of electrostatic chucking on EUVL mask flatness

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Mikkelson, A Engelstad, R Lovell, E Aschke, L Rüggeberg, F Sobel, F Computat Mech Ctr Madison WI 53706 USA

ISBN: (纸本)0819454370

the International technology Roadmap for Semiconductors for Extreme Ultraviolet Lithography (EUVL) places strict requirements on the quality and flatness of the substrate and patterned mask. the SEMI EUVL mask Substrate Standard (SEMI P37) specifies that the substrate frontside and backside nonflatness be no more than 50 nm peak-to-valley (p-v). Recent technological advances in polishing and finishing techniques have placed the 50 nm p-v specification within reach. A key ingredient in the development of EUVL is understanding and characterizing the clamping ability of the electrostatic chuck and the resulting effect on the flatness of the chucked mask. By implementing the shape of a representative EUVL mask surface into a numerical model, the effect of electrostatic chucking on the shape of the mask was determined. Legendre polynomials have been identified as an effective and efficient means of representing EUVL mask surface shapes. Finite element (FE) models have been developed to utilize the Legendre coefficients as input data to define the surfaces of an EUVL mask. the FE models were then used to determine the clamping response of the mask. In particular, the maximum mask-to-chuck gap within the Flatness Quality Area and over the entire mask has been tracked as a function of clamping pressure for representative EUVL surfaces. One of the important parameters in this study was the chuck's mechanical stiffness (comprised of the thickness and modulus). the flatness of the EUVL mask also depends on the intrinsic stress and thickness of the multilayer and backside layers. the results in this paper show that the recent advances in EUVL substrate polishing have resulted in masks that can be chucked relatively flat.

关键词： EUV lithography electrostatic chucking finite element analysis mask flatness

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Measurement results on after etch resist coated features on the new Leica Microsystems' LWM270 DUV critical dimension metrology system

Measurement results on after etch resist coated features on ...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Whittey, J Steinberg, W Leica Microsyst Inc Oakdale CA 95361 USA

ISBN: (纸本)0819454370

Process control in photomask manufacturing is crucial for improving and maintaining optimal yields. the LWM270DUV critical dimension (CD) measurement system is the first tool ever designed for photomask manufacturers that combines both UV (365 nm wavelength light) and DUV (248 nm wavelength light) for CD measurements. UV light illumination was integrated into the LWM270 DUV to allow photomask makers to perform after etch inspection (AEI) on DUV resists minimizing exposure effects. the increased resolution of UV illumination allows for measurement of features as small as 300 nm. Improved measurement algorithms as well as improvements in the illumination system have reduced the uncertainty of measurements resulting in improved performance. this paper details recent measurement results of various feature types on different substrate types using UV transmitted light.

关键词： Photomasks Ultraviolet radiation Critical dimension metrology Deep ultraviolet Microsystems Etching Manufacturing Inspection integrated circuits Optical testing

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Aerial image measurement technique for today's and future 193nm lithography mask requirements

Aerial image measurement technique for today's and future 19...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Zibold, AM Scherübl, T Menck, A Brunner, R Greif, J Carl Zeiss SMS GmbH D-07745 Jena Germany

ISBN: (纸本)0819454370

the Aerial Image Measurement System (AIMS(TM) [1]) for 193 nm lithography emulation has been brought into operation worldwide successfully. Adjusting optical equivalent settings to steppers/scanners the AIMS(TM) system for 193nm allows to emulate any type of reticles for 193nm lithography. the overall system performance is demonstrated by AIMS(TM) measurements at 193 nm wavelength on binary chrome masks and phase shift masks. Especially for evaluation of 65nm node lithography performance process window results will be discussed. An ArF excimer laser is in use for illumination. therefore a beam homogenizer is needed to reduce the speckles in the laser beam and ensure a similar illumination uniformity as the longer wavelength systems, 248nm and longer, using an arc source. A new beam homogenizing technique will be presented and illumination results compared to the current solution. the latest results on enhanced illumination uniformity exceed the current performance. A newly develop hybrid objective for high resolution imaging is tested for use of high resolution imaging in order to review defects and investigate repairs which do not print under stepper equivalent optical settings. An outlook will be given for extension of 193nm aerial imaging down to the 45nm node. Polarization effects will be discussed.

关键词： Photomasks Lithography Image resolution Objectives 193nm lithography Beam homogenizers Lithographic illumination Polarization Reticles Semiconducting wafers

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Semi-transparent isolated defects detection by die to database mask inspection using virtual scanning algorithms for subpixel resolution

Semi-transparent isolated defects detection by die to databa...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Avakaw, SM PLANAR KBTEM OMO Design Off Precis Elect Machine Bldg Minsk 220763 BELARUS

ISBN: (纸本)0819454370

the paper presents the description of the new Virtual Scanning Algorithms (VSA), providing sub-pixel resolution. VSA are the algorithms developed specially for EM-6029B (Fig. 1) and EM-6329 (Fig. 2) die-to-database reticle and photomask inspection systems of "Planar" concern (KBTEM-OMO). For the providing of the effective building in of these algorithms to the inspection system, has being created the special two-levels dynamic model of optical image. the paper presents also the building principles of this model. this model allows, on the one hand, to perform the precise alignment of optical image (collected from the reticle) wit a reference image (generated from the design data), and on the other hand - to perform the analysis of optical image to get optimum mutual position of the digitization grid of the inspection system and detected defects position. VSA calculate the second level of this model. Both the VSA and the second level of dynamic model of optical image are presented the Virtual Scanning sub-System (VSS). VSS allows to increase the detection capability of automatic reticle inspection system by means of achievement sub-pixel resolution. the paper shows, that during the detection of semi-transparent defects, VSA allow, in particular, to get maximum available amplitude contrast of the CCD-signals on the image model. Accordingly, VSA allow also the inspection system to work without using maximum sensitivity settings with the same detection capability. As a result is the reduction of the risk of false or nuisance defects detection, while keeping maximum sensitivity to printable defects. the VSS design and in-house test results are discussed.

关键词： Defect Inspection reticle semi-transparent defect Virtual Scanning Algorithm

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Monitoring strategy to match the advanced fabs

Monitoring strategy to match the advanced fabs

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Ackmann, PW Adv Mask Technol Ctr D-013330 Dresden Germany

ISBN: (纸本)0819454370

the reduction in feature size below the exposure wavelength, the requirement for high yields, the expectation for consistent cycletime and shipment to mix, all mean that the reticle industry must be like advanced wafer fabrication centers. Due to the lower output of write tools versus steppers, and the fact that a reticle is a lot of one instead of 25 or 50 wafers as well as the need to match ship date to Fab ramp, the reticle line monitoring strategy must be optimized for small sample size. the use of tool time and alternative inspection strategies can lead to the early detection of problems. Because every reticle is a customer specific design, the monitoring strategy takes on a new look compared to the Fab. We have organized the AMTC to resemble a wafer fab. We have a dedicated Integration group that works with the customers and technologists, to monitor the needs of the customers and then drive the development programs that improve reticle capability. We have a dedicated yield team to identify and classify the yield loss mechanisms and define probable causes. the teams then work with the Process owners to fix the source of yield loss and track the corrective actions. All sources of variations must be modeled and then sources of errors reduced to levels below the tool specification. the manufacturing organization has all the process and tool experts to focus on Pilot Line and Development tasks to meet the advance needs of our customers. With the organization in place we can then develop the methods based on Reticle and Fab manufacturing to best control the line and provide development with manufacturing cycle times.

关键词： Photomasks Reticles Manufacturing Etching Semiconducting wafers Optical proximity correction Inspection Critical dimension metrology Process control Control systems

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Determining the transfer function of a mask fabrication process

Determining the transfer function of a mask fabrication proc...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Leunissen, LHA Philipsen, V Jonckheere, R IMEC VZW B-3001 Louvain Belgium

ISBN: (纸本)0819454370

A mask making process is the result of data preparation (e.g., bias), patterning and etch. the effect of these steps can be simulated starting from a circuit design. the purpose of this paper is to determine the transfer function for a production flow of a mask, describing the transition from the design to the finished reticle. the simulation results will be compared with actual measurements. 1D measurements of a mask, as shown for example in Ref. [1], provide a lot of useful information. the fingerprint that a writing tool leaves on the experimental result actually makes it possible to determine if the reticle is produced with an e-beam writer or an optical laser tool. From the deviations from the nominal value the "effective" spot size of the laser tool can be determined. In case an e-beam writer is used, the performance of the e-beam proximity correction in use becomes apparent. the mean-to-target offset can be resolved if no data biasing is performed. From SEM pictures of the reticle the 2D corner rounding effects can be determined from the combined influence of the spot size, scattering (in case of an e-beam writer) and data biasing. Global sizing can be resolved from 2D measurements. If the pattern bias is performed for each individual feature it is included in the rounding. Sufficient data about sizing, etch bias and spot size can be obtained if SEM pictures are taken from several critical sites on the reticle. For example, dense lines/spaces or contacts/dots constitute the minimum objects to be printed. Recent reticles ordered at IMEC include a monitor structure. Among other features, this performance monitor contains dots and contact holes with sizes between 90 nm and 250 nm with additional serifs at the corners. the serifs have sizes of 1040 nm in 10 nm steps. All feature sizes are specified at 1x unless otherwise indicated. they are extending multiples of 10 nm from the corner position. In our work we assessed the integrity of varying serifs on dots and c

关键词： reticle quality printability mask transfer function reticle 2D quality proximity effect

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