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检索条件"任意字段=15th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 98 条记录，以下是31-40 订阅

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the compact excimer laser-light source for optical (mask) inspection systems

The compact excimer laser-light source for optical (mask) in...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Pflanz, T Huber, H TuiLaser AG D-82166 Munich Germany

ISBN: (纸本)0819450189

the discharge pumped excimer laser is a gas laser providing ultra violet (UV) radiation with well defined spectral, temporal and spatial properties. the fast development of excimer lasers in recent years has succeeded in designing very compact, turn-key systems delivering up to 10 W of radiation at 248 nm (5 W at 193 run and 1 W at 157 nm) with repetition rates up to 1000 Hz [1]. Experimental data on important beam properties of excimer lasers in the field of mask inspection are being presented and discussed. Relevant parameters are spectral bandwidth, energetic pulse-to-pulse stability, pulse duration, beam pointing stability, beam direction stability, beam dimension, beam profile and coherence. We will compare the excimer laser with lamp sources and continuous wave (CW) lasers in the framework of these parameters. the discussion will show future opportunities of compact excimer lasers in optical inspection as well as in mask writing systems, improving resolution and throughput.

关键词： masks

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Simulation study of pattern printability for reflective mask in EUV lithography

Simulation study of pattern printability for reflective mask...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Sugawara, M Chiba, A Nishiyama, I ASET EUV Proc Technol Res Lab Atsugi Kanagawa 2430198 Japan

ISBN: (纸本)0819450189

Optical proximity effect corrections (OPC) and printability for phase shift masks were examined through simulations. Off-axis illumination exposing a reflective mask gives rise to a shadowing effect that produces an imbalance in the intensity distribution of the light diffracted from mask patterns. It was found that the shifts in the edges of 30-nm-wide T-shaped patterns on a wafer due to both shadowing and optical proximity effects could be corrected simultaneously at an incident angle of 4.84degrees to obtain the proper edge positions. An attenuated phase shift mask with various values for the attenuated reflectance was used to evaluate the printability of isolated line and hole patterns. Annular illumination was found to increase the DOF for isolated patterns 18 nm wide on a wafer, and a DOF of 300 nm was obtained for hole patterns 40 nm wide on a wafer. Printability was also evaluated for an alternating phase shift mask (alt-PSM) with an additive structure. An alt-PSM significantly increases the pattern contrast and enlarges the DOF up to 300 nm for isolated patterns 18 nm wide on a wafer.

关键词： optical proximity correction attenuated phase shift mask alternating phase shift mask

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mask CD characterization with EUV reflectometry at the electron storage ring BESSY II

Mask CD characterization with EUV reflectometry at the elect...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Ehrmann, A Rau, J Wolter, A Kamm, FM Mathuni, J Scholze, F Tümmler, J Ulm, G Infineon Technol AG Munich Germany

ISBN: (纸本)0819450189

CD metrology requirements have increased dramatically within the last years. For the coming technology generations, it is not clear which CD measurement method will be standard for mask manufacturing. An interesting approach is to use the diffracted signal of periodic mask patterns for determination of CD. For wafer CD measurement, CD scatterometry tools using visible or UV wavelengths are already commercially available. For this experiment, diffracted EUV light was used. Dense lines of pitches 1:1, 2:1 and 5:1 and nominal CDs of 150 run, 200 nm, 300 nm, 400 nm and 500 run have been illuminated with EUV light of lambda = 13.35 nm the BESSY II storage ring in Berlin. the reflected signal has been collected with a movable detector in a range of -1degrees to 20degrees relative to the specular reflection. With the angular position of the peak, the pitch can be calculated. the CD, however, is related to the intensity of the peaks. Several effects as mask topography and measurement uncertainties are discussed. the results are compared to CD-SEM measurements of the same patterns.

关键词： Extreme ultraviolet Reflectivity Compact discs Photomasks Scanning electron microscopy Diffraction Scatterometry Sensors Cadmium Computer simulations

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Investigation of reticle defect formation at DUV lithography

Investigation of reticle defect formation at DUV lithography

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Bhattacharyya, K Volk, W Grenon, B Brown, D Ayala, J KLA Tencor Corp Hopewell Jct NY 12533 USA

ISBN: (纸本)0819450189

Defect formation on advanced photomasks used for DUV lithography has introduced new challenges at low k(1) processes industry wide. Especially at 193-nm scanner exposure, the mask pattern surface, pellicle film and the enclosed space between the pellicle and pattern surface can create a highly reactive environment. this environment can become susceptible to defect growth during repetitive exposure of a mask on DUV lithography systems due to the flow of high energy through the mask. Due to increased number of fields on the wafer, a reticle used at a 300-mm wafer fab receives roughly double the number of exposures without any cool down. period, as compared to the reticles in a 200-mm wafer fab. therefore, 193-nm lithography processes at a 300-mm wafer fab put lithographers and defect engineers into an area of untested mask behavior. During the scope of this investigation, an attenuated phase shift mask (attPSM) was periodically exposed on a 193-nm scanner and the relationship between the number of exposures (i.e., energy passed through the mask during exposures) versus defect growth was developed. Finally, chemical analysis of these defects was performed in order to understand the mechanism of this "growth".

关键词： DUV PSM mask contamination mask crystal-growth Cyanuric acid pellicle 193nm scanner STARlight

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Electron beam mask repair with induced reactions

Electron beam mask repair with induced reactions

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Koops, HWP Edinger, K Bihr, J Boegli, V Greiser, J NaWoTec GmbH (Germany) LEO Elektronenmikroskopie GmbH (Germany)

ISBN: (纸本)0819450189

Electron-beam induced chemical reactions and their applicability to mask repair are investigated. For deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. this material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. the tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz, TaN. and silicon carbide stencil masks are given.

关键词： Photomasks Electron beams Etching Interferometers Platinum Charged-particle lithography Control systems Quartz Scanning electron microscopy Silicon carbide

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Feature proximity errors on mask: Assessment results of commercially obtained reticles

Feature proximity errors on mask: Assessment results of comm...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Jonckheere, R Potoms, G Philipsen, V IMEC vzw (Belgium)

ISBN: (纸本)0819450189

the main concern for production-oriented reticles has so far been the control of the critical dimension (CD), i.e. the CD uniformity and the CD mean-to-target. Feature linearity and overall feature size control is as much a strong requirement for a good reticle quality, in view of the mask-Error-Enhancement-Factor (MEEF), which describes how the deviation of an actual feature from its nominal size is magnified onto the wafer. the present paper will discuss the results obtained from a mask linearity study, in which the simultaneous feature size control of different feature types and tone (lines, spaces, dots, contacts) is assessed for varying nominal feature size and proximity (isolated vs. equal lines and spaces), using a reticle CD-SEM. Today mask shops have a range of mask writers available, i.e., 10kV raster scan gaussian beam e-beam tools, laser based optical tools and 50kV vector scan variable shaped e-beam systems. the tool used leaves a so-called "finger print" on the reticle, as a varying linearity behavior. It will be shown that the 50kV writers are superior in terms of mask linearity, as can be expected. Yet, the patterning process used (especially the resist and etching of the patterning layer) is as important. In addition, the mask shop may have compensated for etch bias and for known proximity effects, by tweaking the mask data. the paper will show and discuss the results of masks obtained from over 15 different sources (varying mask shop, tool used and process used), in an anonymous way, as an impression of what is presently available on the market. the results are discussed against the mask requirements table in the ITRS2001.

关键词： 4X reticles CD metrology 2D quality proximity effects 193nm lithography

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A system to improve the understanding of collected logistic data, to optimise cycle-time and delivery performance

A system to improve the understanding of collected logistic ...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： van Rooijen, WJ Rodriguez, B Infineon Technol AG D-81609 Munich Germany

ISBN: (纸本)0819450189

A complex production mask house faces the issue of handling and understanding the logistics information from the production process of the masks. We managed to control key performance indicators like cycle time, flow-factor, line-speed, WIP, etc. To improve the line flow, we set up rules for optimising batching at operations and forbid batching between operations, we defined maximum and minimum WIP at the operations, scheduled urgency of the different lots and built rules for bottleneck management. Also we restricted the number of "hot lots". By migrating to the modem MES (manufacturing execution system) MaTISSe, which manages the shopfloor control, and a reporting database, we are able to eliminate the time deviations within our data, caused by data-extraction for different reports at different moments. this gives us a better understanding of our fixed bottleneck and a faster recognition of the temporarily bottlenecks caused by missing availability of machines or men. In this paper we describe the features and advantages of our new MES, as well as the migration process. After approx. 6 months we already achieved considerable benefits. Our plan is to extend decision support within the MES, to help both managers and operators to make the right decisions. the project behind this paper reaped major benefits described here and we are looking forward to further challenges and successes.

关键词： mask house bottleneck management cycle time flow-factor MES

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Compensation of long-range process effects on photomasks by design data correction

Compensation of long-range process effects on photomasks by ...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Blöcker, M Ballhorn, G Schneider, J Belic, N Eisenmann, H Keogan, D Infineon Technol AG D-81609 Munich Germany

ISBN: (纸本)0819450189

CD requirements for advanced photomasks are getting very demanding for the 100 nm-node and below;the ITRS roadmap requires CD uniformities below 10 nm for the most critical layers. To reach this goal, statistical as well as systematic CD contributions must be minimized. Here, we focus on the reduction of systematic CD variations across the masks that may be caused by process effects, e.g. dry etch loading. We address this topic by compensating such effects via design data correction analogous to proximity correction. Dry etch loading is modeled by gaussian convolution of pattern densities. Data correction is done geometrically by edge shifting. As the effect amplitude has an order of magnitude of 10 nm this can only be done on e-beam writers with small address grids to avoid big CD steps in the design data. We present modeling and correction results for special mask patterns with very strong pattern density variations showing that the compensation method is able to reduce CD uniformity by 50 - 70 % depending on pattern details. the data correction itself is done with a new module developed especially to compensate long-range effects and fits nicely into the common data flow environment. For advanced photomasks the mask data preparation times have become a major issue. To tackle this fracture time increase distributed processing has been introduced into the photomask design flow. We also report first results on the fracture time reduction achievable by distributing the data correction onto a Linux cluster.

关键词： mask process correction dry etch loading pattern density CATS

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Fully automated CD -: Metrology and mask inspection in a mask production environment using the MueTec <M5k>DUV tool

Fully automated CD -: Metrology and mask inspection in a mas...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Scheuring, G Petrashenko, A Döbereiner, S Hillmann, F Brück, HJ Hourd, AC Grimshaw, A Hughes, G Chen, SB Chen, P Schätz, T Struck, T van Adrichem, P Boerland, H Lehnigk, S MueTec GmbH D-80993 Munich Germany

ISBN: (纸本)0819450189

Besides the metrology performance of a CD measurement tool, its close integration into a manufacturing environment becomes more and more important. this is extremely driven by the ever increasing complexity of masks and their tightening specifications. Hence, this calls for the capability of fully automated CD measurements on a large number of dense and isolated lines and 2-dimensional features under production conditions. In this paper we report on such a highly automated measurement system for CD measurements from MueTec. Either an ASCII software interface or a specially developed software interface to connect the MueTec with the CATS(TM) mask data fracturing software handles the large amount of co-ordinates and other information like design images from the measurement sites and their surrounding, which are necessary for fully automated CD measurements. Because the latter is the standard in mask-making and data-formats, this level of automation guarantees a good industrial integration of the MueTec system. Fully automated and reliable CD measurements are based on very stable tool hardware and especially on a positioning stage with best possible positioning accuracy (range better 0.5 mum), significantly improved possibilities of software controlled positioning and an automated job set up and execution. the time gain in relation to existing measurement programs in the extent of supply has turned out to be dramatically large. the User Interfaces and their applications will be described.

关键词： Photomasks Critical dimension metrology Reticles Inspection Deep ultraviolet Metrology Binary data Objectives Cameras Environmental sensing

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A printability study for phase-shift masks at 193nm lithography

A printability study for phase-shift masks at 193nm lithogra...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Philipsen, V Jonckheere, R IMEC VZW B-3001 Louvain Belgium

ISBN: (纸本)0819450189

this paper reports on the mask quality printability for 6% attenuated phase-shift masks (PSM) using 193nm lithography. It is part of a systematic assessment of the impact of mask defects on the printed image. Our previous work [1-3] focused on defect printability of binary masks. Furthermore, an attenuated PSM is also used to print contact holes (CH), as it improves the process latitudes. In this paper we focus on the 2D quality of the CH on the mask. Due to mask-writer effects, the ideally square CH becomes rounded on the mask. the 2D mask quality determines the printed image, together with the exposure conditions and wafer stack. In a first section the influence of programmed mask defects on a 6% attenuated PSM is evaluated. the 100nm gatestyle design is based on the Defect Sensitivity Monitor (DSM of ASML maskTools). We consider two different degrees of optical proximity correction (OPC), i.e., no OPC, and both serifs and scatter bars (SB). the mask contains programmed soft defects made from resist dots to mimic opaque defects such as bumps and spots. the wafers are exposed on an ASML PAS5500/950 scanner with 193nm conventional illumination (0.7sigma) using a numerical aperture (NA) of 0.63. the printing results are compared to aerial image simulations taking into account the actual mask contours. A comparison table, which classifies the defect based on the induced linewidth deviation, is drawn from it. the second section deals with 2D quality of CH on a 6% attenuated PSM. the design contains CH of various sizes and in various pitches. the CH are provided with serifs on the corners, thereby varying size and placement. these serifs are intended as a correction to the design to incorporate possible mask-writer-generated rounding of the ideally square CH. the purpose of this study is to evaluate the influence of such serifs in the design towards wafer printing. the wafers are exposed on an ASML PAS5500/1100 scanner with 193nm conventional illumination (0.6sigma) usi

关键词： defect printability mask 2D quality 193nm lithography attenuated phase-shift mask

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