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检索条件"任意字段=15th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 98 条记录，以下是31-40 订阅

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Integration of OPC and mask data preparation

Integration of OPC and mask data preparation

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Schulze, S LaCour, P Rodriguez, N Mentor Graph Corp Wilsonville OR 97070 USA

ISBN: (纸本)0819450189

As design rules shrink aggressively while the wavelength reduction in the exposure equipment cannot keep up, extensive usage of resolution enhancement techniques (RET) has complicated the generation and handling of mask writing data. Consequently, file size growth and computing times for mask data preparation rise beyond feasibility. In order to address these issues, an integrated flow has been developed. It starts out with the gds-file delivered by the backend of design and combines optical proximity correction, design rule and mask process rule verification, and all other necessary steps for mask data preparation into a single flow. the benefits of this strategy are time savings in data processing and handling, the elimination of intermediate files, and the elimination of data format interface issues. Since the new flow takes full advantage of the design hierarchy, file sizes shrink considerably and the whole data preparation infrastructure can be simplified. the paper will describe the transition to the new flow and quantify the benefits.

关键词： Photomasks Optical proximity correction Resolution enhancement technologies Databases Manufacturing Data storage Etching Interfaces Optical design Process modeling

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Method to determine a detection capability of the die-to-database mask inspection system in regard to pinhole and pindot defects

Method to determine a detection capability of the die-to-dat...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Avakaw, SM Opto Mech Equipment Design Off Precis Elect Tools Bldg Minsk BELARUS

ISBN: (纸本)0819450189

the paper presents a description and results of the use of a new method to determine a capability to detect defects such as pinholes and pindots in order to test reticle and photomask inspection systems EM-6029B and EM-6329 using a die-to-database comparison method. In the introductory part given are the reasons for the necessity to determine a probability to detect defects with sizes smaller than the tool detection threshold, as well as given are the grounds for the necessity to precisely determine a scope of tests required to determine this probability. In the main part presented is a method of testing the equipment with the purpose to determine a probability to detect defects such as a pindot and a pinhole, including a procedure to estimate a required number of experiments to verify the probability to detect features of different sizes with a given confidence coefficient.

关键词： inspection reticles detection probability

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mask fabrication by nanoimprint lithography using anti-sticking layers

Mask fabrication by nanoimprint lithography using anti-stick...

引用

16th european conference on mask technology for integrated circuits and microcomponents

作者： Schulz, H Osenberg, F Engemann, J Scheer, HC Univ Gesamthsch Wuppertal Wuppertal Germany

ISBN: (纸本)0819436143

We have studied anti-sticking layers for nanoimprint lithography using different types of polymers, thermoplastic and thermosetting ones. Typically thermosetting polymers have higher mask selectivity in a fluorocarbon dry etch process than the thermoplastic polymers, but replication into these materials is much more complicated. We observe a high tendency for the polymer to adhere to the stamp. To minimize the sticking problem a fluorocarbon coating of the stamp was tested. It was deposited in a radio frequency plasma reactor with C4F8 as a feed gas. the thickness of the coating was several nm. It was characterised by contact angle measurement, XPS and FTIR analysis. Such coatings could successfully reduce sticking effects during an imprint process.

关键词： nanoimprint lithography (NIL) anti-sticking layer plasma deposition

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OASIS - Progress on implementing the new stream format for containing data size explosion

OASIS - Progress on implementing the new stream format for c...

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Steffen, SA Kent, NB Buck, P Mentor Graphics Corp Wilsonville OR 97070 USA

ISBN: (纸本)0819454370

the data volumes of individual files used in the manufacture of modern integrated circuits have become unmanageable using existing data formats specifications. the ITRS roadmap indicates that single layer MEBES files in 2004 exceed 200 GB threshold, worst case. OASIS, the new stream format developed under the sponsorship of SEMI, has been approved in the industry-wide voting in June 2003. the new format that on average will reduce the file size by an order of magnitude, enables to streamline data flows and provides increased efficiency in data exchange. the work to implement the new format into software tools is in progress. this paper gives an overview on the new format, reports results on data volume reduction and is a report on the status and benefits the new format can deliver. A data flow relying on OASIS as the input and transfer format is discussed.

关键词： GDSII stream OASIS integrated circuit layout mask making photomask hierarchical processing

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Dynamic mask defects in hot embossing lithography

Dynamic mask defects in hot embossing lithography

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Bogdanski, N Schulz, H Wissen, M Scheer, HC Univ Gesamthsch Wuppertal Fac Elect Informat & Media Engn Wuppertal Germany

ISBN: (纸本)0819454370

Nanoimprint was performed in very thin layers of polystyrene (PS) in order to define a mask with minimum CD loss for a subsequent etch process at minimum etching time for opening of the mask windows after imprinting. the initial polymer layer thickness was chosen as to fill the stamp cavities with nearly no surplus of polymer material. the residual layers after imprint were in the range of 50 nm and could be cleared at 50% overetch within 90 s in an oxygen RIE step. As there was not enough polymer material available for a complete filling of the cavities when a residual layer remains, filling defects occurred. High imprint temperature and thus low viscosity led to formation of deep defects in the imprint and thus the mask to be formed by embossing. Lift off experiments revealed that within the defective regions the remaining polymer layer thickness was smaller than the imprinted residual layer. In order to avoid such mask defects the imprint temperature had to be reduced.

关键词： nanoimprint hot embossing mask defects

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Measures to achieve 20-nm IPL stencil mask distortion

Measures to achieve 20-nm IPL stencil mask distortion

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Haugeneder, E Chalupka, A Lammer, T Loeschner, H Kamm, FM Struck, T Ehrmann, A Kaesmaier, R Wolter, A Butschke, J Irmscher, M Letzkus, F Springer, R IMS Nanofabricat GmbH Vienna Austria

ISBN: (纸本)0819445312

From detailed comparisons of stencil mask distortion measurements with Finite Element (FE) analyses the parameters of influence are well known. Most of them are under control of the mask manufacturer, such as the membrane stress level and the etching process. By means of FE analysis the different contributions may be classified. Some of the errors can be reduced if more stringent specifications of the SOI wafer are fulfilled, some of them may be reduced after pre-calculation. Reduction of the remaining placement errors can be achieved if specific means of an Ion Projection Lithography (IPL) tool are applied. these are mainly magnification and anamorphic corrections removing so-called global distortions. the remaining local distortions can be further reduced by applying the concept of thermal mask adjustment (thEMA).

关键词： Photomasks Semiconducting wafers Distortion Silicon Ion beams Electrodes Ions Wafer bonding Manufacturing Projection lithography

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Use of nanomachining for 100 nanometer mask repair

Use of nanomachining for 100 nanometer mask repair

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： LoBianco, B White, R Nawrocki, T RAVE LLC (United States)

ISBN: (纸本)0819450189

Nanomachining has recently been introduced as a new technology for subtractive repair of 130-nanometer masks. the RAVE LLC nm 1300 utilizes this innovative strategy, facilitating repairs of all materials currently used in mask production. this technology has allowed 130-nanometer mask repair specifications to be met. this paper introduces nanomachining as a method of repairing next generation 100-nanometer masks. Emphasis will be given to materials and designs that provide significant challenges to current industry repair techniques;specifically quartz bumps on alternating phase shift masks and repairs within tight lines and spaces. Several advantages will be demonstrated, including the ability to machine within high aspect ratio features, the capability to duplicate edge slope, superior edge placement control, quartz bump repair, and transmission values approaching defect-free areas. this paper will compare performance to the SIA roadmap requirements for 100-nanometer mask repair using RAVE LLC'S next generation system, the nm 1000.

关键词： Photomasks Quartz Image processing Phase shifts Atomic force microscopy Binary data Cryogenics Glasses Head Navigation systems

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Optimization of the e-beam sensitive bilayer CARL process for stencil mask making

Optimization of the e-beam sensitive bilayer CARL process fo...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Ochsenhirt, J Butschke, J Letzkus, F Höfflinger, B Irmscher, M Reuter, C Springer, R Elian, K IMS Chips D-70569 Stuttgart Germany

ISBN: (纸本)0819436143

Hardmask-less stencil mask making requires resist masks with a high aspect ratio. the bilayer CARL (chemical amplification of resist lines) process was evaluated and optimized with respect of generating irregular resist features below 180nn in a film thickness of 750nm. Especially the dry development was detailed investigated using statistical design and analysis of experiment. Processed CARL resist masks are compared with Top Surface Imaging (TSI) results. Finally, results of a deep silicon etching process using the CARL resist masks are presented.

关键词： Silicon Photoresist processing Photomasks Etching mask making Tin Line edge roughness Plasma Critical dimension metrology Statistical analysis

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mask strategy at international SEMATECH

Mask strategy at international SEMATECH

引用

18th european conference on mask technology for integrated circuits and microcomponents

作者： Kimmel, KR Int SEMATECH Austin TX USA

ISBN: (纸本)0819445312

International SEMATECH (ISMT) is a consortium consisting of 13 leading semiconductor manufacturers from around the globe. Its objective is to develop the infrastructure necessary for it member companies to realize the International technology Roadmap for Semiconductors (ITRS) through efficiencies of shared development resources and knowledge. the largest area of effort is lithography, recognized as a crucial enabler for microelectronics technology progress. Within the Lithography Division, most of the efforts center on mask-related issues. the development strategy at International SEMATECH will be presented and the interlock of lithography projects clarified. Because of the limited size of the mask production equipment market, the business case is weak for aggressive investment commensurate with the pace of the International technology Roadmap for Semiconductors. With masks becoming the overwhelming component of lithography cost, new ways of reducing or eliminating mask costs are being explored. Will mask technology survive without a strong business case? Will the mask industry limit the growth of the semiconductor industry? Are advanced masks worth their escalating cost? An analysis of mask cost from the perspective of mask value imparted to the user is presented with examples and generic formulas for the reader to apply independently. A key part to the success for both International SEMATECH and the industry globally will be partnerships on both the local level between mask-maker and mask-user, and the macro level where global collaborations will be necessary to resolve technology development cost challenges.

关键词： mask photomask mask cost lithography cost International SEMATECH

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130 nm node mask development

130 nm node mask development

引用

17th european conference on mask technology for integrated circuits and microcomponents

作者： Chabala, JM Weaver, S Alexander, D Lu, MY Kim, NW Cole, D Etec Syst Inc Hayward CA 94545 USA

ISBN: (纸本)0819440396

As device dimensions shrink, a detailed understanding of the exposure and development of masks is necessary to optimize electron-beam lithography. Because of proximity effects and dose distributions within the resist, achieving small-pattern fidelity is one of the most challenging tasks in maskmaking. the research discussed in this paper examines the exposure and process parameters that influence the fidelity of features on a photomask, with a focus on critical dimension (CD uniformity, CD linearity, small-feature resolution, and long-term system performance. In accordance with operating recommendations for the MEBES(R) 5500 system, all experiments are performed with ZEP 7000 resist, 10 muC/cm(2) dose, ZED 750 developer, and dry etch. Some experiments employ GHOST proximity effect correction (FastPEC). these results are instructive for improved 130 nm node lithography and 180 nm node productivity.

关键词： electron beam photomask multipass gray MPG MPG-II GHOST CD uniformity

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