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检索条件"任意字段=15th European Conference on Mask Technology for Integrated Circuits and Microcomponents"
98 条 记 录,以下是31-40 订阅
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the compact excimer laser-light source for optical (mask) inspection systems
The compact excimer laser-light source for optical (mask) in...
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19th european conference on mask technology for integrated circuits and microcomponents
作者: Pflanz, T Huber, H TuiLaser AG D-82166 Munich Germany
the discharge pumped excimer laser is a gas laser providing ultra violet (UV) radiation with well defined spectral, temporal and spatial properties. the fast development of excimer lasers in recent years has succeeded... 详细信息
来源: 评论
Simulation study of pattern printability for reflective mask in EUV lithography
Simulation study of pattern printability for reflective mask...
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19th european conference on mask technology for integrated circuits and microcomponents
作者: Sugawara, M Chiba, A Nishiyama, I ASET EUV Proc Technol Res Lab Atsugi Kanagawa 2430198 Japan
Optical proximity effect corrections (OPC) and printability for phase shift masks were examined through simulations. Off-axis illumination exposing a reflective mask gives rise to a shadowing effect that produces an i... 详细信息
来源: 评论
mask CD characterization with EUV reflectometry at the electron storage ring BESSY II
Mask CD characterization with EUV reflectometry at the elect...
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19th european conference on mask technology for integrated circuits and microcomponents
作者: Ehrmann, A Rau, J Wolter, A Kamm, FM Mathuni, J Scholze, F Tümmler, J Ulm, G Infineon Technol AG Munich Germany
CD metrology requirements have increased dramatically within the last years. For the coming technology generations, it is not clear which CD measurement method will be standard for mask manufacturing. An interesting a... 详细信息
来源: 评论
Investigation of reticle defect formation at DUV lithography
Investigation of reticle defect formation at DUV lithography
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19th european conference on mask technology for integrated circuits and microcomponents
作者: Bhattacharyya, K Volk, W Grenon, B Brown, D Ayala, J KLA Tencor Corp Hopewell Jct NY 12533 USA
Defect formation on advanced photomasks used for DUV lithography has introduced new challenges at low k(1) processes industry wide. Especially at 193-nm scanner exposure, the mask pattern surface, pellicle film and th... 详细信息
来源: 评论
Electron beam mask repair with induced reactions
Electron beam mask repair with induced reactions
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19th european conference on mask technology for integrated circuits and microcomponents
作者: Koops, HWP Edinger, K Bihr, J Boegli, V Greiser, J NaWoTec GmbH (Germany) LEO Elektronenmikroskopie GmbH (Germany)
Electron-beam induced chemical reactions and their applicability to mask repair are investigated. For deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a mole... 详细信息
来源: 评论
Feature proximity errors on mask: Assessment results of commercially obtained reticles
Feature proximity errors on mask: Assessment results of comm...
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19th european conference on mask technology for integrated circuits and microcomponents
作者: Jonckheere, R Potoms, G Philipsen, V IMEC vzw (Belgium)
the main concern for production-oriented reticles has so far been the control of the critical dimension (CD), i.e. the CD uniformity and the CD mean-to-target. Feature linearity and overall feature size control is as ... 详细信息
来源: 评论
A system to improve the understanding of collected logistic data, to optimise cycle-time and delivery performance
A system to improve the understanding of collected logistic ...
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19th european conference on mask technology for integrated circuits and microcomponents
作者: van Rooijen, WJ Rodriguez, B Infineon Technol AG D-81609 Munich Germany
A complex production mask house faces the issue of handling and understanding the logistics information from the production process of the masks. We managed to control key performance indicators like cycle time, flow-... 详细信息
来源: 评论
Compensation of long-range process effects on photomasks by design data correction
Compensation of long-range process effects on photomasks by ...
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19th european conference on mask technology for integrated circuits and microcomponents
作者: Blöcker, M Ballhorn, G Schneider, J Belic, N Eisenmann, H Keogan, D Infineon Technol AG D-81609 Munich Germany
CD requirements for advanced photomasks are getting very demanding for the 100 nm-node and below;the ITRS roadmap requires CD uniformities below 10 nm for the most critical layers. To reach this goal, statistical as w... 详细信息
来源: 评论
Fully automated CD -: Metrology and mask inspection in a mask production environment using the MueTec <M5k>DUV tool
Fully automated CD -: Metrology and mask inspection in a mas...
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19th european conference on mask technology for integrated circuits and microcomponents
作者: Scheuring, G Petrashenko, A Döbereiner, S Hillmann, F Brück, HJ Hourd, AC Grimshaw, A Hughes, G Chen, SB Chen, P Schätz, T Struck, T van Adrichem, P Boerland, H Lehnigk, S MueTec GmbH D-80993 Munich Germany
Besides the metrology performance of a CD measurement tool, its close integration into a manufacturing environment becomes more and more important. this is extremely driven by the ever increasing complexity of masks a... 详细信息
来源: 评论
A printability study for phase-shift masks at 193nm lithography
A printability study for phase-shift masks at 193nm lithogra...
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19th european conference on mask technology for integrated circuits and microcomponents
作者: Philipsen, V Jonckheere, R IMEC VZW B-3001 Louvain Belgium
this paper reports on the mask quality printability for 6% attenuated phase-shift masks (PSM) using 193nm lithography. It is part of a systematic assessment of the impact of mask defects on the printed image. Our prev... 详细信息
来源: 评论