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检索条件"任意字段=15th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 98 条记录，以下是41-50 订阅

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Development and characterization of new CD mask standards:: a status report

Development and characterization of new CD mask standards:: ...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Schätz, T Hauffe, B Döbereiner, S Brück, HJ Brendel, B Bettin, L Röth, KD Steinberg, W Speckbacher, P Sedlmeier, W Engel, T Hässler-Grohne, W Mirandé, W Bosse, H Infineon Technol AG D-81541 Munich Germany

ISBN: (纸本)0819450189

We report on the current status of a project on development and characterization of CD photomasks with 6025 format to be used as reference standards for different type of CD metrology instruments. the project consortium consists of mask suppliers, manufacturers of CD metrology instruments, users of such instruments and calibration laboratories. Different type of CD metrology instrumentation, namely optical CD microscopes, CD-SEM, and AFM will be applied for investigation and measurement of microstructures, additionally supported by AIMS tool. We will describe the basic design criteria of the mask standard and first measurement results gained with different metrology tools on the prototype mask standards.

关键词： Photomasks Prototyping Metrology Standards development Atomic force microscopy Calibration Line edge roughness Critical dimension metrology Chromium Opacity

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Dynamic mask defects in hot embossing lithography

Dynamic mask defects in hot embossing lithography

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Bogdanski, N Schulz, H Wissen, M Scheer, HC Univ Gesamthsch Wuppertal Fac Elect Informat & Media Engn Wuppertal Germany

ISBN: (纸本)0819454370

Nanoimprint was performed in very thin layers of polystyrene (PS) in order to define a mask with minimum CD loss for a subsequent etch process at minimum etching time for opening of the mask windows after imprinting. the initial polymer layer thickness was chosen as to fill the stamp cavities with nearly no surplus of polymer material. the residual layers after imprint were in the range of 50 nm and could be cleared at 50% overetch within 90 s in an oxygen RIE step. As there was not enough polymer material available for a complete filling of the cavities when a residual layer remains, filling defects occurred. High imprint temperature and thus low viscosity led to formation of deep defects in the imprint and thus the mask to be formed by embossing. Lift off experiments revealed that within the defective regions the remaining polymer layer thickness was smaller than the imprinted residual layer. In order to avoid such mask defects the imprint temperature had to be reduced.

关键词： nanoimprint hot embossing mask defects

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Measures to achieve 20-nm IPL stencil mask distortion

Measures to achieve 20-nm IPL stencil mask distortion

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Haugeneder, E Chalupka, A Lammer, T Loeschner, H Kamm, FM Struck, T Ehrmann, A Kaesmaier, R Wolter, A Butschke, J Irmscher, M Letzkus, F Springer, R IMS Nanofabricat GmbH Vienna Austria

ISBN: (纸本)0819445312

From detailed comparisons of stencil mask distortion measurements with Finite Element (FE) analyses the parameters of influence are well known. Most of them are under control of the mask manufacturer, such as the membrane stress level and the etching process. By means of FE analysis the different contributions may be classified. Some of the errors can be reduced if more stringent specifications of the SOI wafer are fulfilled, some of them may be reduced after pre-calculation. Reduction of the remaining placement errors can be achieved if specific means of an Ion Projection Lithography (IPL) tool are applied. these are mainly magnification and anamorphic corrections removing so-called global distortions. the remaining local distortions can be further reduced by applying the concept of thermal mask adjustment (thEMA).

关键词： Photomasks Semiconducting wafers Distortion Silicon Ion beams Electrodes Ions Wafer bonding Manufacturing Projection lithography

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Optimization of the e-beam sensitive bilayer CARL process for stencil mask making

Optimization of the e-beam sensitive bilayer CARL process fo...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Ochsenhirt, J Butschke, J Letzkus, F Höfflinger, B Irmscher, M Reuter, C Springer, R Elian, K IMS Chips D-70569 Stuttgart Germany

ISBN: (纸本)0819436143

Hardmask-less stencil mask making requires resist masks with a high aspect ratio. the bilayer CARL (chemical amplification of resist lines) process was evaluated and optimized with respect of generating irregular resist features below 180nn in a film thickness of 750nm. Especially the dry development was detailed investigated using statistical design and analysis of experiment. Processed CARL resist masks are compared with Top Surface Imaging (TSI) results. Finally, results of a deep silicon etching process using the CARL resist masks are presented.

关键词： Silicon Photoresist processing Photomasks Etching mask making Tin Line edge roughness Plasma Critical dimension metrology Statistical analysis

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Simulation study of 193-nm phase-shifting masks: Analysis of distributed defects of embeded attenuated phase mask (EAPSM)

Simulation study of 193-nm phase-shifting masks: Analysis of...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Karklin, L Numer Technol Inc San Jose CA 95134 USA

ISBN: (纸本)0819445312

With constant push for smaller and faster devices photo mask technology has become the most critical part of the entire integrated circuit (IC) production flow. mask inspection and mask defect repair are increasingly important components of advanced photo mask technology. the low cost of mask manufacturing and the necessity of delivering photo masks to production floor in the shortest possible time require new photo mask specs and acceptance criteria. It is no longer economically viable to reject a photo mask because some mask anomalies were found, or repair all the defects detected by state of the art inspection tool. One should use a smart approach to separate tolerable mask anomalies from real mask defects that might negatively affect device yield. However, this is not a trivial task. With rising mask complexity (e.g., binary masks with aggressive optical proximity correction or phase-shifting masks (PSM)-attenuated and alternating) and inspection and metrology tools running out of steam, new technologies such as the AIMS(TM) and Virtual Stepper(R) system must be used to sort nuisance mask defects from real ones. this will help to reduce the number of required defect repairs and shorten mask manufacturing cycle time. However, it is very difficult to utilize AIMS in the production environment because of its low operational speed;the Virtual Stepper software, in its turn, does rely on mask data captured by inspection/metrology hardware. In the case of phase masks, such as Attenuated PSM (especially high transmission EAPSM) and Alternating PSM, inspection tools are not able to accurately retrieve optical properties of mask materials and as a result defect analysis is becoming very difficult and is an unreliable task. A very common type of PSM defect that occur during mask manufacturing and repair processes are the so-called distributed defects such as gallium stains, riverbed pinhole clusters, and large chrome residuals (on EAPSM). It is very difficult to get accura

关键词： Photomasks Inspection Semiconducting wafers Critical dimension metrology Lithography Manufacturing Phase shifts Metrology integrated circuits Reticles

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Elements of hierarchical mask data preparation - Bottom up or top down?

Elements of hierarchical mask data preparation - Bottom up o...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Kalus, CK Simecek, M SIGMA C D-81737 Munich Germany

ISBN: (纸本)0819445312

Data Preparation has become another challenge to the many existing ones in mask making. this was mainly brought about by the advent of OPC and PSM layouts. the amount of data, doubling every year, has experienced a quantum leap. the more aggressive optical proximity correction the greater the leap. Hierarchical data treatment is one of the most powerful means to keep memory and CPU consumption in reasonable ranges [1]. Only recently, however, has this technique acquired more public attention [2], [3]. In this paper we will present means to quantitatively measure the degree of hierarchy. In addition to global numbers local numbers turn out to be extremely helpful. they may serve the purpose to treat different branches of a tree, e.g. of a memory layout, by different approaches. Several alternatives exist, which have, to date, not been thoroughly investigated. One is a bottom-up attempt to treat cells starting with the most elementary cells. the other one is a top-down approach which lends itself to creating a new hierarchy tree. A trivial approach, widely used so far, is to flatten the layout. Conditions will be shown for the alternatives to work most effectively.

关键词： integrated circuit layout

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Contact layer printing using alternating phase-shifting masks: mask making, patterning results and production implementation

Contact layer printing using alternating phase-shifting mask...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Pforr, R Dettmann, W Eisenhut, M Hennig, M Hofmann, D thiele, J thielscher, G Infineon Technol SC300 GmbH & Co KG D-01099 Dresden Germany

ISBN: (纸本)0819454370

Contact layers of the DRAM manufacturing process can be printed well using alternating phase-shifting masks. State-of-the-art mask making tools have sufficient performance to manufacture defect free contact masks. the enlarged process window compared to conventional masks allows to shrink the contacts size or to substitute advanced scanners by older generation steppers for contact layer patterning. Using older generation exposure systems may cause problems originating in worse lens aberration performance. A method will be described how to overcome overlay problems by applying a specifically designed OL measurement target.

关键词： contacts phase-shifting masks layout conversion off-axis illumination pattern shift overlay

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Cleaning of low thermal expansion materials for low defect EUVL mask substrates

Cleaning of low thermal expansion materials for low defect E...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Krüger-Velthusen, E Friemel, F Aschke, L Lenzen, F Schott Lithotec AG Meiningen Germany

First tests for cleaning Zerodur(R) were accomplished. Because there are only a few cleaning methods suitable for the removal of small particles down to 50 nm we have investigated the behaviour of Zerodur(R) in DI wat... 详细信息

ISBN: (纸本)0819445312

关键词： Zerodur Ultrasonics Unmanned aerial vehicles Photomasks Atomic force microscopy Extreme ultraviolet lithography Particles Glasses Quartz Radium

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Development of embedded attenuated phase-shifting mask (EAPSM) blanks for ArF lithography

Development of embedded attenuated phase-shifting mask (EAPS...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Mitsui, H Nozawa, O Ohtsuka, H Takeuchi, M Kobayashi, H Ushida, M Electroopt Co HOYA Corp Nagasaka Factory Yamanashi 4088550 Japan

ISBN: (纸本)0819436143

the embedded attenuated phase-shift mask (EAPSM) has been in practical use for i-line and deep UV lithography. In 193nm lithography, too, the EAPSM is considered to be a promising resolution enhancement technique for its simple structure and fabrication process required. We at HOYA have attempted to extend the applicability of MoSi-based EAPSM blanks to 193nm lithography, helping extend the life of the existing infrastructure for conventional EAPSM fabrication. We have completed tuning our new MoSi-based film for 193nm lithography and characterized its optical properties, chemical durability, ArF laser exposure durability and mask-making process compatibility.

关键词： reticle embedded attenuated phase-shift mask (EAPSM) 193nm lithography MoSi photomask blanks

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Application of E-beam chemically amplified resist to devices below 0.18μm node

Application of E-beam chemically amplified resist to devices...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Jeon, CU Kim, CH Choi, SW Han, WS Sohn, JM Samsung Electronics Co. Ltd. (South Korea)

ISBN: (纸本)0819440396

We have experimentally studied a possibility of chemically amplified (CA) resist process for mask production in various aspects. the pattern fidelity of CA resist for small patterns such as serifs and scattering bars was compared to that of ZEP7000, the most frequently used e-beam resist. We elucidated the degree of delay effect in vacuum during a long e-beam writing time. It proved that critical-dimension (CD) change occurred with an acetal. type resist compared to an acrylate type resist. We have achieved CD uniformity of < 10nm in 3 sigma within 135 X 135 mm(2) field showing a high possibility for CAR process to be applied to the mask production for device generations, beyond 180nm.

关键词： Photomasks mask making Photoresist processing Optical proximity correction Scanning electron microscopy Critical dimension metrology Chemically amplified resists Scattering Vestigial sideband modulation Diffusion

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