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检索条件"任意字段=15th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 98 条记录，以下是51-60 订阅

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Shaped beam technology for nano-imprint mask lithography

Shaped beam technology for nano-imprint mask lithography

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Hudek, P Beyer, D Groves, TR Fortagne, O Dauksher, WJ Mancini, D Nordquist, K Resnick, DJ Leica Microsyst Lithog GmbH D-07745 Jena Germany

ISBN: (纸本)0819454370

the Leica SB350MW 50keV shaped-beam e-beam lithography tool was used to write large-area 1X templates applicable in Step and Flash Imprint Lithography (S-FIL)(1). this paper describes how information from the pattern analysis can be used to define the ZEP7000 resist exposure optimization technique for the SB350 MW2 tool together with the Motorola template pattern transfer process(3.15) to obtain final template images in the transparent template. As a result of the complete process, well-resolved trenches measuring 33nm and contacts as small as 44nm were obtained. Further improvements in the resist patterning will be possible by an adaptation of our standard proximity corrector (currently used in the 90nm node maskmaking) with a high resolution upgrade.

关键词： nano-imprint shaped beam mask template proximity correction

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Investigation of quartz etch rate uniformity for alternating phase shift mask applications utilizing a next generation ICP source

Investigation of quartz etch rate uniformity for alternating...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Strawn, C Constantine, C Plumhoff, J Westerman, R Unaxis USA Inc St Petersburg FL 33716 USA

ISBN: (纸本)0819440396

As critical dimensions and exposure wavelengths approach the physical limitations of optical lithography, the use of newer techniques such as Phase Shift Photomask Technologies become necessary to extend the viability of DUV lithographic tools. Alternating Phase Shift mask technologies are challenging the capabilities of current quartz dry etch processes;as this phase shift technique is achieved by the precise removal of quartz, the need for ever improving phase shift uniformity across the photomask surface requires extremely uniform quartz etch depth. To this end, a Next Generation ICP (Inductively Coupled Plasma) hardware configuration has been adopted. In this article, the quartz etch parameter space of this new ICP source is explored. Finally, process results including, quartz roughness, sidewall profile, and most importantly quartz etch rate uniformity will be presented.

关键词： Etching Quartz Photomasks Phase shifts Plasma Dry etching Electroluminescence Surface roughness Lithography Optical lithography

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Feasibility study of manufacturing process and quality control for the new Alternating PSM structure

Feasibility study of manufacturing process and quality contr...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Morikawa, Y Kokubo, H Nishiguchi, M Nara, M Totsu, Y Hoga, M Hayashi, N Dai Nippon Printing Co Ltd Semicond Components Lab Semicond Components Operat Kamifukuoka Saitama 3568507 Japan

ISBN: (纸本)0819445312

Alternating phase-shifting mask (***) technology is the most effective approach to expand resolution limitation and expand the process window of lithography. Currently, etched quartz *** have been introduced not only for device development but also for production use. We have been supplying *** with Single trench + Undercut structures for the mass-production of KrF lithography and reported this structure is applicable for ArF lithography. (*1,2,3) On the other hand, we have introduced preliminary manufacturing results of the new *** structure. (*3) this structure has the advantages, which are exempted from biasing issues and narrow chrome width limitations. (*4) In order to make sure the adaptability of this new *** structure in mass-manufacturing, we started to investigate productivity for this structure. In this report, we will discuss about the feasibility study of manufacturing process and quality control which include CID performance results, alignment error tolerance evaluations and defect assurance evaluations.

关键词： alternating phase-shifting mask side-wall chrome alternating aperture mask SCAAM undercut structure resolution enhancement technique

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the impact of EUV mask defects on lithographic process performance

The impact of EUV mask defects on lithographic process perfo...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Evanschitzky, P Erdmann, A Fraunhofer Inst Integrated Syst & Device Technol D-91058 Erlangen Germany

ISBN: (纸本)0819454370

As the options for experimental studies are still limited, a predictive simulation of EUV lithography (extreme ultraviolet lithography) is important for a better understanding of the technology. In particular, the simulation of defective EUV masks is a fundamental task because of the significant impact of certain defects on the lithographic process. the description of such a defective mask is one of the most critical issues for the modeling of EUV lithography. A new model for the simulation of defects inside the multilayer of an EUV reflective mask, developed at Fraunhofer IISB, is used for the presented study. the model consists of a combination of a rigorous electromag-netic field (EMF) computation and an analytical thin film computation. Compared to other methods, such as fully rigorous EMF simulations, this new approach leads to a significant reduction of computation time and memory requirements. the model can be applied to two and three dimensional defects and masks. this paper will present a detailed study of the impact of EUV mask defects on the near fields, the aerial images, and the process windows. Typical mask structures, e. g. 3D contact holes and 2D lines with various defects, are investigated. Defect parameters, such as the defect position with respect to the main feature to be imaged, the defect height, the defect FWHM (full width at half maximum), and the number of compressed layers inside the multilayer are varied. the important defect parameters and their critical ranges are identified using the new simulation method. the impact of these parameters on the image CD and the image position are demonstrated.

关键词： EUV mask multilayer defects lithography simulation

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mask CD characterization with EUV reflectometry at the electron storage ring BESSY II

Mask CD characterization with EUV reflectometry at the elect...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Ehrmann, A Rau, J Wolter, A Kamm, FM Mathuni, J Scholze, F Tümmler, J Ulm, G Infineon Technol AG Munich Germany

ISBN: (纸本)0819450189

CD metrology requirements have increased dramatically within the last years. For the coming technology generations, it is not clear which CD measurement method will be standard for mask manufacturing. An interesting approach is to use the diffracted signal of periodic mask patterns for determination of CD. For wafer CD measurement, CD scatterometry tools using visible or UV wavelengths are already commercially available. For this experiment, diffracted EUV light was used. Dense lines of pitches 1:1, 2:1 and 5:1 and nominal CDs of 150 run, 200 nm, 300 nm, 400 nm and 500 run have been illuminated with EUV light of lambda = 13.35 nm the BESSY II storage ring in Berlin. the reflected signal has been collected with a movable detector in a range of -1degrees to 20degrees relative to the specular reflection. With the angular position of the peak, the pitch can be calculated. the CD, however, is related to the intensity of the peaks. Several effects as mask topography and measurement uncertainties are discussed. the results are compared to CD-SEM measurements of the same patterns.

关键词： Extreme ultraviolet Reflectivity Compact discs Photomasks Scanning electron microscopy Diffraction Scatterometry Sensors Cadmium Computer simulations

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Optimized processes and absorber-stack materials forEUV masks

Optimized processes and absorber-stack materials forEUV mask...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Mathuni, J Rau, J Kamm, FM Ruhl, G Holfeld, C Letzkus, F Köpernik, C Butschke, J Infineon Technol D-81541 Munich Germany

ISBN: (纸本)0819454370

Currently, EUV lithography targets for sub-50 nm features. these very small feature sizes are used for reflective illumination and impose great challenges to the mask maker since they do not allow a simple downscaling of existing technologies. New material combinations for absorber and buffer layer of EUV masks have to be evaluated and fundamental material limits have to be overcome. We report on optimized absorber-stack materials and compare in particular the performance of chrome and tantalum nitride for such small nodes. Tantalum nitride shows similar or even better properties than standard chrome, above all with respect to etch bias. Further investigations have to be done but this material is a promising candidate for feature sizes in the sub-50 nm range.

关键词： EUV lithography mask tantalum nitride etching etch bias etch uniformity

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Actual performance data obtained on new transmitted light mask metrology system

Actual performance data obtained on new transmitted light ma...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Roeth, KD Schlueter, G Leica Microsyst Semicond GmbH D-35578 Wetzlar Germany

ISBN: (纸本)0819445312

To keep pace with continuously shrinking design rules for masks and reticles Leica Microsystems has developed the new mask metrology tool LMS IPRO2. It is designed to measure pattern placement and CDs in transmitted light at Wine (365nm) illumination. Details on improvements over the previous system and performance data from the beta-site system are presented. the step to a shorter illumination wavelength leads to a better optical resolution power resulting in an improved edge detection. Transmitted light illumination enables to use the tool for CD measurement on quartz and phase shift masks.

关键词： mask metrology transmitted light measurement. optical CD-metrology pattern placement metrology next generation lithography masks (NGL)

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Looking back: Artwork and mask making in Dresden for the East German megabit chip project

Looking back: Artwork and mask making in Dresden for the Eas...

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Becker, HW Fraunihofer Inst Photon Mikrosyst IPMS D-01109 Dresden Germany

ISBN: (纸本)0819454370

After the early mask making during the 1960's in Dresden has been discussed at the 19(th) EMC now the view is focused to the further mask making efforts in Dresden, where the leading East German labs for research and development of microelectronics had been located. the mask making processes developed continuously, but one can recognize some different periods. First a three-stage process realized artwork originals - reticles - masks. then a two-stage process realized reticles - masks. In the end a one-stage process realized only the reticles which were applied to the wafers by means of a waferstepper. technology and equipment of the mask processes were developed in cooperation with other East German companies such as Carl Zeiss Jena. Some examples for microlithographic equipment are given. Finally, late in the 1980's, a high technology equipment existed in Dresden which met the microlithographic challenges of a Megabit DRAM technology: chip size of about 13 nun x 5 mm, minimum features of about 1 mum. mask making occured with the e-beam writer ZBA21, mask application was carried out with the waferstepper AUR. the specific parameters are listed and the arrangement of the chip design (1MbitDRAM chip U61000) on the reticle is discussed with respect to the image field conditions. Some pictures show the ground plan of the reticles and the reticle masks, which were made on chromium coated glass blanks 125 mm x 125 mm.

关键词： microelectronics artwork mask making Eastern Bloc history

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Investigation of reticle defect formation at DUV lithography

Investigation of reticle defect formation at DUV lithography

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Bhattacharyya, K Volk, W Grenon, B Brown, D Ayala, J KLA Tencor Corp Hopewell Jct NY 12533 USA

ISBN: (纸本)0819450189

Defect formation on advanced photomasks used for DUV lithography has introduced new challenges at low k(1) processes industry wide. Especially at 193-nm scanner exposure, the mask pattern surface, pellicle film and the enclosed space between the pellicle and pattern surface can create a highly reactive environment. this environment can become susceptible to defect growth during repetitive exposure of a mask on DUV lithography systems due to the flow of high energy through the mask. Due to increased number of fields on the wafer, a reticle used at a 300-mm wafer fab receives roughly double the number of exposures without any cool down. period, as compared to the reticles in a 200-mm wafer fab. therefore, 193-nm lithography processes at a 300-mm wafer fab put lithographers and defect engineers into an area of untested mask behavior. During the scope of this investigation, an attenuated phase shift mask (attPSM) was periodically exposed on a 193-nm scanner and the relationship between the number of exposures (i.e., energy passed through the mask during exposures) versus defect growth was developed. Finally, chemical analysis of these defects was performed in order to understand the mechanism of this "growth".

关键词： DUV PSM mask contamination mask crystal-growth Cyanuric acid pellicle 193nm scanner STARlight

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Electron beam mask repair with induced reactions

Electron beam mask repair with induced reactions

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Koops, HWP Edinger, K Bihr, J Boegli, V Greiser, J NaWoTec GmbH (Germany) LEO Elektronenmikroskopie GmbH (Germany)

ISBN: (纸本)0819450189

Electron-beam induced chemical reactions and their applicability to mask repair are investigated. For deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. this material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. the tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz, TaN. and silicon carbide stencil masks are given.

关键词： Photomasks Electron beams Etching Interferometers Platinum Charged-particle lithography Control systems Quartz Scanning electron microscopy Silicon carbide

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